| 金属铝在半导体表面的吸附 |
| |
| 引用本文： | 张开明,叶令,徐永年.金属铝在半导体表面的吸附[J].物理学报,1982,31(2):220-225. |
| |
| 作者姓名： | 张开明 叶令 徐永年 |
| |
| 作者单位： | 复旦大学现代物理研究所 |
| |
| 摘 要： | 本文采用集团模型,用自洽的EHT方法计算金属Al在Si(111)和GaAs(110)面上吸附的稳定的几何构型和电子态,结果表明,Al在Si(111)面的三度开位上的离子吸附比顶位的共价吸附更稳定,态密度与实验符合也更好,Al吸附在GaAs(110)面上,将取代表面Ga原子,形成AlAs,此时GaAs(110)面将恢复到不弛豫的理想位置。
关键词：
|
| 收稿时间： | 6/2/1981 12:00:00 AM |
ALUMINIUM CHEMISORPTION ON THE SEMICONDUCTOR SURFACES |
| |
| ZHANG KAI-MING,YE LING and XU YONG-NIAN.ALUMINIUM CHEMISORPTION ON THE SEMICONDUCTOR SURFACES[J].Acta Physica Sinica,1982,31(2):220-225. |
| |
| Authors: | ZHANG KAI-MING YE LING and XU YONG-NIAN |
| |
| Abstract: | The cluster model and the self-consistent extended Huckel method are used to calculate the stable configuration for the chemisorption of Al on both the Si(lll) and GaAs(110) surfaces. The calculated results show that the threefold ionic chemisorption for Al/Si (111) is more stable than that for the covalent top site, and the LDOS for the threefold site agrees quite well with the experimental data. In the case of Al/GaAs(110), the Al adatom substitutes the surface Ga atom to form an AlAs layer, and the Al chemisorption leads the relaxed GaAs (110) back to the unrelaxed ideal position. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
