n-type ZnS used as electron transport material in organic light-emitting diodes |
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Authors: | Du Peng Zhang Xi-Qing Sun Xue-Bai Yao Zhi-Gang and Wang Yong-Sheng |
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Institution: | Key Laboratory of Luminescence and Optical Information, Ministry of Education,China;Institute of Optoelectronic Technology, Beijing Jiaotong University,Beijing 100044, China |
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Abstract: | This paper reports on the n-type ZnS used as electron transport layer
for the organic light-emitting diodes (OLEDs). The naphthyl-substituted
benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium
(Alq$_{3})$ are used as the hole transport layer and the emitting layer
respectively. The insertion of the n-type ZnS layer enhances the electron
injection in the OLEDs. The study was carried out on OLEDs of structures:
indium--tin-oxide (ITO)/NPB/Alq$_{3}$/ZnS/LiF/AL, ITO/NPB/Alq$_{3}$/LiF/AL
and ITO/NPB/Alq$_{3}$/AL. The luminance and efficiency of the device
containing this electron transport layer are increased significantly over
those obtained from conventional devices due to better carrier balance. |
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Keywords: | OLEDs n-type ZnS electron transport layer luminance efficiency |
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