Development of electron and hole selective contact materials for perovskite solar cells |
| |
Authors: | Yaming Yu Peng Gao |
| |
Institution: | a College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China;
b Xiamen Institute of Rare Earth Materials, Chinese Academy of Sciences, Xiamen 361024, China |
| |
Abstract: | Nowadays, both n-i-p and p-i-n perovskite solar cells (PSCs) device structures are reported to give high performance with photo conversion efficiencies (PCEs) above 20%. The efficiency of the PSCs is fundementally determined by the charge selective contact materials. Hence, by introducing proper contact materials with good charge selectivity, one could potentially reduce interfacial charge recombination as well as increase device performance. In the past few years, copious charge selective contact materials have been proposed. Significant improvements in the corresponding devices were observed and the reported PCEs were close to that of classic Spiro-OMeTAD. This mini-review summarizes the state-of-the-art progress of typical electron/hole selective contact materials for efficient perovskite solar cells and an outlook to their development is made. |
| |
Keywords: | Perovskite solar cell Charge selective contact materials Energy level HTM ETM |
本文献已被 CNKI 等数据库收录! |
| 点击此处可从《中国化学快报》浏览原始摘要信息 |
| 点击此处可从《中国化学快报》下载免费的PDF全文 |
|