| Spin-Dependent Electron Tunneling in ZnSe/Zn_(1-x)Mn_xSe Heterostructures with Double δ-Potentials |
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| 摘 要： | Using the matrix method, spin-dependent tunneling properties such as barrier transparency, the degree of resonance polarization, and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic semiconductor heterostructure. The effects of the double δ-potential and the magnetic field are discussed on the transport properties of the electrons. The introduction of double δ-potential shifts the resonance peak of polarization to the higher energy value. Both height and position of the δ-potential influence the degree of resonance polarization in the considered heterostructure. The increasing magnetic field enhances the spin-polarization.
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| 收稿时间： | 2018-08-10 |
Spin-Dependent Electron Tunneling in ZnSe/Zn1-xMnxSe Heterostructures with Double δ-Potentials |
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| Authors: | LBruno Chandrasekar MKarunakaran KGnanasekar |
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| Institution: | 1. Department of Physics, The American College, Madurai 625002, India;
2. Department of Physics, Alagappa Govt. Arts College, Karaikudi 630003, India |
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| Abstract: | Using the matrix method, spin-dependent tunneling properties such as barrier transparency, the degree of resonance polarization, and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic semiconductor heterostructure. The effects of the double δ-potential and the magnetic field are discussed on the transport properties of the electrons. The introduction of double δ-potential shifts the resonance peak of polarization to the higher energy value. Both height and position of the δ-potential influence the degree of resonance polarization in the considered heterostructure. The increasing magnetic field enhances the spin-polarization. |
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| Keywords: | matrix method heterostructure δ-potential |
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