Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment |
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| Authors: | Xie Yuanbin Quan Si Ma Xiaohua Zhang Jincheng Li Qingmin Hao Yue Key Laboratory of Wide B gap Semiconductor Materials Devices |
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| Affiliation: | Xie Yuanbin~ ,Quan Si,Ma Xiaohua,Zhang Jincheng,Li Qingmin,and Hao Yue Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated on an AlGaN/GaN heterostructure.The D flip-flop and NAND gate are demonstrated in a GaN system for the first time.The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area,integrating with a conventional AlGaN/GaN D-HEMT and demonst... |
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| Keywords: | AlGaN/GaN fluorine plasma treatment inverter NAND gate D flip-flop |
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