| Abstract: | Thin Nd oxide films were prepared on Si (P) substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X‐ray diffraction (XRD). The dc electrical transport properties of the devices with amorphous and crystalline Nd oxide were investigated. The current‐temperature J(T) characteristics suggest that the carrier transport through the insulator follows Mott's variable‐range hopping (VRH) mechanism and its results were compared with the results obtained from X‐ray diffraction. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
