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Crystal growth and characterization of the CdGaCrSe(4‐X)S(X) system
Authors:V Sagredo  L Betancourt  L M de Chalbaud  G E Delgado
Abstract:Single‐crystal of the CdGaCrSe(4‐X)S(X) system (x = 0; 1; 2; 3; 4) were grown by the chemical vapour‐phase transport technique. The crystals were obtaine by using CdCl2 as transporting agent for the composition with x = 1, and CrCl3 for those with x = 0; 2; 3 and 4. X‐ray powder diffraction analysis indicated that some of the samples crystallizes in the tetragonal system with space group I‐4 (CdGaCrSe3S , x = 1; CdGaCrSe2S2 , x = 2), or in a cubic system with space group Fd‐3m (CdGaCrSeS3, x = 3; CdGaCrS4, x = 4), however the sample of CdGaCrSe4 (x = 0) crystallizes in rhombohedral system. Magnetic measurements show significant changes in the magnetic interactions behaviour probably due to the anionic substitutions. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:magnetic semiconductor  crystal growth  X‐ray powder diffraction
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