基于VO_2薄膜非致冷红外探测器光电响应研究

VO2 薄膜是非致冷微测辐射热红外探测器热敏电阻材料 .研究中应用微电子工艺制备了VO2 溅射薄膜红外探测器 ,在 2 96K的环境中测试了该探测器在不同的直流偏置、光调制频率下对 873K标准黑体源 8— 12 μm红外辐射的光电响应以及器件的噪声电压 ,在 10和 30Hz的调制频率下其响应率分别大于 17kV/W和接近 10kV/W .该探测器实现了探测率D 大于 1 0× 10 8cmHz/W ,热时间常量为 0 0 11s的 8— 12 μm非致冷红外探测

INFRARED RESPONSIVITY OF UNCOOLED VO2-BASED THIN FILMS BOLOMETER

VO2 thin films are used for uncooled microbolometer due to their high temperature coefficient of resistance.In this paper,on the basis of fabricating the uncooled bolometer based on VO2 sputtered thin films,the responsivity for the spectral range of 8 - 12μm region dependence on bias current and chopper frequency is studied.The result indicates that the responsivity is over 17kV/W and up to 10kV/W at a chopper frequency of 10 and 30Hz,respectively.The device having a detectivity D* of exceeding 1.0 × 108 cm Hz/W and a thermal time constant of 0.011 seconds has been realized.