| Zn_(0.04)Cd_(0.96)Te中深能级的红外光电导谱研究 |
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| 引用本文： | 袁先漳,裴慧元,陆卫,李宁,史国良,方家熊,沈学础.Zn_(0.04)Cd_(0.96)Te中深能级的红外光电导谱研究[J].物理学报,2001,50(4). |
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| 作者姓名： | 袁先漳 裴慧元 陆卫 李宁 史国良 方家熊 沈学础 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 应用红外光电导谱研究半绝缘p型Zn0.04Cd0.96Te中的深能级，在温度从4.2到165K范围内，观察到了位于0.24，0.34，0.38，0.47，0.55和0.80eV处6个光电导响应峰.结合4.2K下光致发光谱的测量结果以及对ZnxCd1-xTe中深能级发光光谱、深能级瞬态谱等已有的研究结果，对这些响应峰对应的深能级特性进行了讨论.
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| 关 键 词： | ZnxCd1-xTe 光电导 杂质 深能级 |
INFRARED PHOTOCONDUCTIVITY SPECTRA OF DEEP LEVELS IN Zn_(0.04) Cd_(0.96) Te |
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| YUAN XIAN-ZHANG,PEI HUI-YUAN,LU WEI,LI NING,SHI Guo-liang,FANG Jia-xiong,SHEN Xue-Chu.INFRARED PHOTOCONDUCTIVITY SPECTRA OF DEEP LEVELS IN Zn_(0.04) Cd_(0.96) Te[J].Acta Physica Sinica,2001,50(4). |
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| Authors: | YUAN XIAN-ZHANG PEI HUI-YUAN LU WEI LI NING SHI Guo-liang FANG Jia-xiong SHEN Xue-Chu |
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| Abstract: | The infrared photoconductivity spectroscopy has been employed to investigate the deep levels in semi-insulating p-type Zn0.04Cd0.96Te. At the temperature ranging between 4.2 and 165K, photoconductivity peaks at 0.24，0.34，0.38，0.47，0.55 and 0.80eV are observed. In conjunction with the photoluminescence measurement of the sample at 4.2K, the characteristics of the deep levels related to the photoconductivity peaks are discussed. |
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| Keywords: | Zn x Cd 1-x Te photoconductivity impurity deep level |
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