Surface- and microanalytical characterization of ion-implanted Si-C-N layers |
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| Authors: | H Klewe-Nebenius M Bruns H Lutz H Baumann F Link K Bethge |
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| Institution: | Forschungszentrum Karlsruhe GmbH, Institut für Instrumentelle Analytik, P.O.B. 3640, D-76021 Karlsruhe, Germany, DE
Universit?t Frankfurt/M., Institut für Kernphysik, August-Euler-Strasse 6, D-60486 Frankfurt/M., Germany, DE
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| Abstract: | The development of production methods for carbonitridic hard coatings needs information on depth distributions of the layer components as well as on stoichiometries and binding states of the layer constituents. Si-C-N samples were produced by implanting 13C- and 15N-ions into c-Si <111>, and the implanted layers were investigated by means of NRA depth profiling. Afterwards several samples were characterized by surface analytical techniques, and XPS- and AES depth profiles were measured for typical samples. The measurements confirm the NRA depth profiles and stoichiometries. Furthermore, in all depth ranges C 1s- and N 1s binding energies are observed which are consistent with those of carbonitrides. |
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