Structural studies of ITO films using grazing incidence x-ray diffractometry

Tin doped indium oxide (ITO) films deposited by e-beam evaporation were investigated using grazing incidence x-ray diffractometry (GIXRD). With increasing doping concentration the x-ray peak positions are shifted to lower angles and the line profiles become broader. Rietveld refinements show that tin in small concentrations occupies regular In sites. Line profile analysis reveals that higher tin concentrations cause an increasing of lattice defects, as grain boundaries and microstrains. The results of the structural investigations correlate with resistivity measurements.