Porous silicon: repeatability of generation? |
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| Authors: | G Sperveslage J Grobe G Egbers A Benninghoven |
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| Institution: | Department of Inorganic Chemistry, University of Münster, Wilhelm-Klemm-Strasse 8, D-48149 Münster, Germany, DE
Department of Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany, DE
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| Abstract: | A systematic investigation of the preparation of porous silicon layers (PSLs) on silicon wafers by anodic treatment in hydrofluoric acid/water/ethanol mixtures under various conditions was carried out with the aim to develop a repeatable process for homogeneous layers. The preparations were controlled by FTIR spectroscopy supported by TOF-SIMS measurements of the uppermost surface area. The repeatability of PLS generation was proved on the grounds of the IR-absorption of SiHx and OxSiHy surface groups with respect to their frequencies and intensities. Uniform properties of PSLs are an essential assumption for defined chemical modifications. |
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