Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition |
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| Authors: | VI Marakhonov NA Rogachev EI Terukov JT Ishkalov IN Trapeznikova |
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| Institution: | a A.F. Ioffe Physico-Technical Institute, Leningrad, USSR |
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| Abstract: | Magnetron assisted silane decomposition (MASD) is proposed as a method for deposition of a-Si:H and its alloys. In this method a silane containing gas mixture is passed through the magnetron plasma near a target and decomposed there. The deposition rate in the case of the c-Si target is increased 3 times compared to magnetron sputtering and film properties are changed. a-SiSn:H is obtained with a Sn target. |
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