Compensation effect in undoped polycrystalline CdTe synthesized under nonequilibrium conditions |
| |
Authors: | V S Bagaev Yu V Klevkov S A Kolosov V S Krivobok A A Shepel’ |
| |
Institution: | 1. P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia
|
| |
Abstract: | The compensation effect has been revealed in undoped polycrystalline CdTe synthesized during rapid crystallization. The revealed effect leads to an increase in the electrical resistivity to 108–1010 Ω cm at a background impurity concentration of ~1015 cm?3 (GaCd and ClTe donors, unidentified acceptors). For some samples, this effect is accompanied by the appearance of persistent photoconductivity, which disappears at a temperature of ~200 K. It has been shown that all the polycrystals studied are characterized by a three-level compensation mechanism in which the fundamental properties of the material are determined by deep donors and/or acceptors with a concentration of 1012 cm?3. Depending on the specific growth conditions, the electrical resistivity at room temperature is determined by deep centers with activation energies of 0.59 ± 0.10 and 0.71 ± 0.10 eV, which are supposedly related to intrinsic point defects, and deep centers with activation energies of 0.4 ± 0.1 eV, which belong to the DX center formed by the GaCd donor. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|