Simplifying patterning process of ZnO nanowires by one step development and etching process

We present herein a simple protocol of growing a patterned ZnO nanowire by etching of ZnO seed layer in the tetramethyl ammonium hydroxide (TMAH) solution. The ZnO seed layer was fabricated by sol–gel method using zinc acetate solution and patterned by using photolithographic method. Patterned ZnO seed layer as etched in the TMAH solution, followed by growth of ZnO nanowires by hydrothermal method. Remarkable point of present ZnO seed layer patterning is that development of UV-exposed photoresist and etching of ZnO seed layer is subsequently processed in aqueous TMAH solution without interruption. The grown ZnO nanowires were analyzed using XRD patterns to exhibit high purity and degree of crystallinity, and showed very good pattern fidelity.