| GaN基倒装焊LED芯片的光提取效率模拟与分析 |
| |
| 引用本文： | 钟广明,杜晓晴,田健.GaN基倒装焊LED芯片的光提取效率模拟与分析[J].发光学报,2011,32(8):773-778. |
| |
| 作者姓名： | 钟广明 杜晓晴 田健 |
| |
| 作者单位： | 1. 重庆大学 光电工程学院, 重庆 400044;
2. 重庆大学 光电技术与系统教育部重点实验室, 重庆 400044 |
| |
| 基金项目： | 中央高校科研业务费(CDJZR10120014,CDJXS11120021)资助项目 |
| |
| 摘 要： | 采用蒙特卡罗光线追踪方法,模拟GaN基倒装LED芯片的光提取效率,比较了蓝宝石衬底剥离前后、蓝宝石单面粗化和双面粗化、有无缓冲层下LED光提取效率的变化,并对粗化微元结构和尺寸作了进一步选取与优化.研究结果表明:采用较厚的蓝宝石衬底和引入AlN缓冲层均有利于LED光提取效率的提高；蓝宝石衬底双面粗化对提高光提取效率的效...
|
| 关 键 词： | GaN基倒装LED 光提取效率 光线追踪 双面粗化 AlN缓冲层 |
| 收稿时间： | 2011-03-24 |
Simulation and Analysis of Light Extraction Efficiency of GaN-based Flip-chip Light-emitting Diodes |
| |
| ZHONG Guang-ming,DU Xiao-qing,TIAN Jian.Simulation and Analysis of Light Extraction Efficiency of GaN-based Flip-chip Light-emitting Diodes[J].Chinese Journal of Luminescence,2011,32(8):773-778. |
| |
| Authors: | ZHONG Guang-ming DU Xiao-qing TIAN Jian |
| |
| Institution: | 1. College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China;
2. Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing 400044, China |
| |
| Abstract: | According to Monte-Carlo ray tracing method,this paper simulated the GaN-based flip-chip LED light extraction efficiency(LEE),compared the differences between the status of sapphire with substrate and without it,with one side roughening and double sides roughening,with and without buffer layer,and made further selection and optimization about the structure and the size of surface roughing unit.The results showed that both the thicker substrate and introduction of AlN buffer layer were favorable for the incr... |
| |
| Keywords: | GaN-based flip-chip LEDs light extraction efficiency light ray trace double-surface roughening AlN buffer layer |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《发光学报》浏览原始摘要信息 |
| 点击此处可从《发光学报》下载免费的PDF全文 |
