Effect of pressure on the low-temperature reaction of ethylene with N2O4

Calorimetric monitoring of the autoclave reaction N₂O₄ + C₂H₄ at –85 to +10 °C under argon pressure 10–30 bar revealed that the exothermic chemical reaction started at temperatures above –52 °C at 10 bar, whereas an intensive exothermic reaction started at –85 °C and pressure of 30 bar. IR study showed that oligo/polynitroethylene was formed at 30 bar, while carbonyl and hydroxy compound as well as nitrate R–ONO₂ formation occurred upon processing at 10 bar.     

砂岩在西湖凹陷花港组交互式盖层中的作用初探

西湖凹陷花港组盖层具有砂泥岩交互式发育特征，而与泥岩伴生的砂岩类盖层的油气封闭作用研究较少。采用岩芯、镜下观察及压汞等分析方法，对砂泥岩交互式盖层中的砂岩特征进行了分析。结果表明，盖层中的砂岩可作为有效盖层，砂岩类盖层早期受沉积环境控制，含有较多的泥质而导致早期压实作用较强，加之晚期的黏土矿物转换及胶结物的发育，具备形成良好盖层的条件。在不同地区进行砂岩盖层有效性研究时应以沉积环境为基础，针对不同类型的砂岩进行成岩作用研究，并针对不同类型的砂岩样品进行实验分析以明确砂岩盖层的有效性。     

Synthesis of nano-polycrystalline diamond from glassy carbon at pressures up to 25 GPa

ABSTRACT

Nano-polycrystalline diamond (NPD) with various grain sizes has been synthesized from glassy carbon at pressures 15–25?GPa and temperatures 1700–2300°C using multianvil apparatus. The minimum temperature for the synthesis of pure NPD, below which a small amount of compressed graphite was formed, significantly increased with pressure from ～1700°C at 15?GPa to ～1900°C at 25?GPa. The NPD having grain sizes less than ～50?nm was synthesized at temperatures below ～2000°C at 15?GPa and ～2300°C at 25?GPa, above which significant grain growth was observed. The grain size of NPD decreases with increasing pressure and decreasing temperature, and the pure NPD with grain sizes less than 10?nm is obtained in a limited temperature range around 1800–2000°C, depending on pressure. The pure NPD from glassy carbon is highly transparent and exhibits a granular nano-texture, whose grain size is tunable by selecting adequate pressure and temperature conditions.     

海上电泵结蜡井热循环洗井工艺参数优化设计

为探索海上油田电泵举升结蜡井热循环洗井工艺井筒温度场分布规律，综合考虑潜油电机增温、电缆散热、热流体注入量、注入深度、注入温度、结蜡管段传热和海水空气导热的影响，基于热能守恒原理，建立了电泵井结蜡热循环洗井工艺井筒温度场计算模型，分析了热流体注入温度和注入量对混合产出流体的井筒温度分布的影响。研究结果表明，随着注入量的增加混合产出液沿程井筒温度增加，随着注入温度的增加混合产出液沿程井筒温度增加。该方法可有效指导现场措施工艺的实施，达到延长结蜡井的清蜡周期、延缓产液/产油量下降速度的目的。     

为什么要引入溶剂的渗透因子

阐明了引入溶剂渗透因子的必要性,较详细地介绍了两种渗透因子及它们间的关系。     

含气率对PTS时压力容器内流动与传热的影响

本文对反应堆压力容器紧急安注时的流动与传热特性在1/10的模型上进行了流动可视化、局部传热系数以及混合函数的试验研究。针对三个热冲击敏感区域的部分测点,比较了环腔流速为0.5m/s、安注流速为1～30 m/s时不同含气率对下降环腔内流动与传热特性的影响,得出并分析了不同测点传热系数、混合函数的变化规律。研究结果表明:随着含气率增大,安注流体与环腔流体的混合增强;下降环腔内的含气率对小安注流速时的流动与传热影响显著,而对大安注流速时影响较小。     

压力淬火过程中锗的相结构研究

 应用高压原位差热方法，直接测量了压力下锗的固化参数─—固化温度与过冷度。高压差热信号表明，当压力大于3 GPa时，锗在凝固过程中可能发生结构相变。X射线结构分析表明，在最终的样品中除GeⅠ相外，还形成GeⅢ相和GeⅣ相。     

二氧化钒薄膜的低温制备及其性能研究

针对VO₂薄膜在微测辐射热计上的应用，采用射频反应溅射法，在室温下制备氧化钒薄膜；研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压，先获得成分接近VO₂的非晶化薄膜，再在400℃空气中氧化退火，便可制得高电阻温度系数，低电阻率的VO₂薄膜，电阻温度系数约为-4%/℃，薄膜方块电阻为R_□为100—300kΩ；薄膜在室温下沉积，400℃下退火的制备方法与微机电加工(micro electromechanic 关键词： 二氧化钒 电阻温度系数 氧分压 射频反应溅射法     

超临界流体触媒作用下石墨-金刚石转变

 研究了超临界流体CO₂在石墨-金刚石转变中的触媒作用。实验中，采用Ag₂O作为流体触媒的先驱材料，在7.7 GPa压力下，Ag₂O在1 200 ℃分解成Ag和O₂，O₂与石墨套管在高温高压下反应形成CO₂超临界流体。研究结果表明，在7.7 GPa和1 500 ℃以上温度条件下，石墨在CO₂流体触媒的作用下可转变为金刚石晶体，在1 500～1 700 ℃温度范围内合成出的金刚石具有完好的八面体形貌，与天然金刚石的生长特征非常相似。     

High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S)

We report the results of an X-ray diffraction study of CdAl₂Se₄ and of Raman studies of HgAl₂Se₄ and ZnAl₂Se₄ at room temperature, and of CdAl₂S₄ and CdAl₂Se₄ at 80 K at high pressure. The ambient pressure phase of CdAl₂Se₄ is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl₂Se₄ and ZnAl₂Se₄ reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl₂S₄ and CdAl₂Se₄, which shows a very weak temperature dependence of the Raman-active phonon modes.