轧制道次间插入冷却对特厚钢板组织与性能的影响

使用实验轧机旁冷却装置配合轧机进行轧制实验，研究轧制道次间不同冷却工艺对特厚钢板组织和性能的影响规律.研究结果表明:采用道次间冷却工艺可以在全厚度方向获得组织细化及强韧性提高效果，采用强冷道次间冷却实验钢1/4处晶粒尺寸可细化至10μm，强度为376MPa，-40℃冲击功为169J;心部晶粒尺寸可细化至15μm，强度为360MPa，-40℃冲击功为123J.本工艺可形成470μm厚表层细晶层，晶粒尺寸可细化至5μm;粗轧道次间插入冷却工艺轧制钢板强度和冲击韧性优于中间坯冷却工艺;随冷却强度增加，钢板内部组织明显细化且强度大幅提高.     

基于JAVA建立树形结构的算法优化

树形结构在程序设计过程具有非常重要的作用,但树形结构的构建相对比较复杂。通过研究设计并实现一种从普通Java对象中建立树形结构的优化算法。     

Role of FTFSI Anion Asymmetry on Physical Properties of AFTFSI (A=Li,Na and K) Based Electrolytes and Consequences on Supercapacitor Application

This study compares the physicochemical properties of six electrolytes comprising of three salts: LiFTFSI, NaFTFSI and KFTFSI in two solvent mixtures, the binary (3EC/7EMC) and the ternary (EC/PC/3DMC). The transport properties (conductivity, viscosity) as a function of temperature and concentration were modeled using the extended Jones-Dole-Kaminsky equation, the Arrhenius model, and the Eyring theory of transition state for activated complexes. Results are discussed in terms of ionicity, solvation shell, and cross-interactions between electrolyte components. The application of the six formulated electrolytes in symmetrical activated carbon (AC)//AC supercapacitors (SCs) was characterized by cyclic voltammetry (CV), galvanostatic cycling with potential limitation (GCPL), electrochemical impedance spectroscopy (EIS) and accelerated aging. Results revealed that the geometrical flexibility of the FTFSI anion allows it to access and diffuse easily in AC whereas its counter ions (Li⁺, Na⁺ or K⁺) can remain trapped in porosity. However, this drawback was partially resolved by mixing LiFTFSI and KFTFSI salts in the electrolyte.     

SAR图像并行拼接方法研究与实现* 〖HT4K〗——基于改进完全二叉树模型

随着SAR成像技术的快速发展，SAR图像覆盖的地域范围与成像精度也在迅速增长，这对SAR图像拼接工作的实时性提出了挑战;文章对SAR图像序列特征进行深入分析，提出了采用基于分割的完全二叉树模型进行SAR图像的并行拼接，并使用MPI点对点通信方式对之进行了不同数量机群规模下的实现；对比实验证明，基于该方法的并行拼接工作比传统并行拼接方法在降低拼接时耗上更加有效，且并行拼接后的完整图像效果良好.     

Highly Luminescent Red Phosphorescent OLED with Interfacial Layers for Hole Transport and Electron Injection

Four kinds of red phosphorescent organic light-emitting devices were fabricated and compared to investigate the effect of interfacial layers for hole transport and electron injection. 1 nm-thick LiF in the device A and C and 1 nm-thick Cs₂CO₃ in the device B and D were deposited as an electron injection layer between the anode and the electron transport layer, and 5 nm-thick layer of dipyrazion[2,3-f:2′,2′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile[HATCN] was inserted as a hole transport interfacial layer between the hole injection layer and the hole transport layer only in the device C and D. Under a luminance of 1000 cd/m², the power efficiencies were 7.6 lm/W and 8.5 lm/W in the device A and B, and 8.6 lm/W and 13.4 lm/W in the device C and D. The quantum efficiency of the device D was 15.8% under 1000 cd/m² which was somewhat lower than those of the device A and C, but a little higher than that of the device B. The luminance of the device D was much higher than those of the other devices at a given votage. The luminance of the device D at 7 V was 23,710 cd/m², which was 13.0, 3.4, and 4.0 times higher than those of the device A, B, and C at the same voltage, respectively.     

The visible and ultraviolet organic light-emitting diodes with germanium dioxide as facile solution-processed anode buffer layer

Germanium dioxide (GeO₂) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO₂ behaves superior film morphology and enhanced work function. Using GeO₂ as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm² and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO₂ ABL formed from appropriate concentration of GeO₂ aqueous solution favors hole injection enhancement and accordingly promoting device performance.     

焦炉上升管内壁结焦炭层的光谱学分析及结焦机理研究

以焦炉上升管内壁结焦炭层块为研究对象，采用X射线荧光光谱仪（XRF）、X射线衍射仪（XRD）、傅里叶红外光谱仪（FTIR）和激光共聚焦拉曼光谱仪（Raman）对结焦炭层的元素组成，以及各结焦炭层的矿物组成、组成结构和分子结构进行测试。分析从结焦炭层块外表面向内表面过渡的各结焦炭层的差异性，揭示焦炉上升管内壁结焦机理。结果表明焦炉上升管内粉尘中Fe，S和Cr极易催化荒煤气中蒽、萘等稠环芳烃化合物成炭，在焦炉上升管内壁形成炭颗粒沉积，为焦油凝结挂壁提供载体，在荒煤气温度降至结焦温度时易结焦积碳。结焦炭层均含有芳香层结构，随着结焦炭层从外表面向内表面过渡，各结焦炭层的面层间距(d₀₀₂)逐渐降低、层片直径(L_a)先降低后增加、层片堆砌高度(Lc)和芳香层数(N)先稳定后增加。结焦炭层石墨化过程是由结焦炭层内表面向外表面进行，主要包括其片层外缘的羧基和部分C-O结构的降解剥离，从而形成高度规整的共轭结构。结焦炭层块中C元素是以结晶碳与无定型碳的混合物形式存在。以上研究为解决焦炉上升管内壁结焦及腐蚀问题，提高换热器换热效率，有效回收焦炉荒煤气显热，降低焦化企业能耗提供实验基础和理论依据。     

VSAT系统改进冲突分解算法研究

文章提出一种新的改进隔离型随机N叉树形冲突分解算法,对VSAT随机接入多址接入系统中冲突分解进行了研究。给出了冲突信息分组分解所需平均时隙数和系统吞吐量的解析式,进一步给出了信息分组冲突分解的实验值。     

模糊物元精细评价方法在油水井酸化选井选层中的应用

油水井酸化是油气藏常用的增产增注措施之一．酸化措施足否有效取决于多方面的因素，而选井选层是其中一个重要环节．本文采用模糊物元分析疗法，用油水井代表事物，评价因素代表特征，建立了复合模糊物元矩阵，对油田整个区块需要酸化作业的井位和对应层位进行了综合决策，排列出需要进行酸化的井位和层位的先后顺序，为进一步施工奠定了理论基础．该方法排除了人为因素的影响，达到了科学决策的目的．文中选用某油田六口井的实际资料进行了计算，其结果与实际情况一致．     

无向树图的k点连通最小扩充

解决了以最少边集扩充一个任意无向树图为k点连通图这一优化问题,提出了一个计算复杂度为D(|V|~4)的算法。为进一步研究可靠网络的计算机辅助设计打下基础。