煤直接液化油中混合酚的分离研究

利用分子筛择形特点，对煤直接液化油中的混合酚实施高效分离。本研究选取间甲酚和对甲酚作为分离煤直接液化油馏分段混合酚的模型化合物，采用化学液相沉积法对HZSM-5吸附剂的孔口结构进行改变，分析分子筛硅铝比及颗粒粒径对模型化合物间甲酚和对甲酚吸附分离性能的影响，以获得高性能固相吸附剂，并将其应用于180-190℃馏分段混合酚分离。结果表明，当分子筛硅铝比为25、粒径为3-5 μm时，分子筛的孔口结构调节效果最优；当正硅酸乙酯的最小用量为0.2 mL/g时，固相吸附剂的吸附量为0.03 g/g，对甲酚选择性高于95%。由于外表面沉积物对吸附剂的孔口结构变化，导致对甲酚选择性的提高。进一步采用HZSM-5（1）吸附剂对真实煤直接液化油混合酚的分离中发现，苯酚和对甲酚的选择性均达到100%。     

Can a Procedure for the Growth of Single-layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a “showerhead” cold-wall type, whereas the other represented the popular “tubular” hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm²-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.     

海上电泵结蜡井热循环洗井工艺参数优化设计

为探索海上油田电泵举升结蜡井热循环洗井工艺井筒温度场分布规律，综合考虑潜油电机增温、电缆散热、热流体注入量、注入深度、注入温度、结蜡管段传热和海水空气导热的影响，基于热能守恒原理，建立了电泵井结蜡热循环洗井工艺井筒温度场计算模型，分析了热流体注入温度和注入量对混合产出流体的井筒温度分布的影响。研究结果表明，随着注入量的增加混合产出液沿程井筒温度增加，随着注入温度的增加混合产出液沿程井筒温度增加。该方法可有效指导现场措施工艺的实施，达到延长结蜡井的清蜡周期、延缓产液/产油量下降速度的目的。     

基于免疫粒子群优化的移动Sink路径规划算法

为了减少能量空洞和延长网络生命周期，在无线传感网中采用移动 Sink 的方式收集节点采集的数据是解决能 量效率问题的有效措施．采集路径的规划问题类似于旅行商问题，无法得到多项式时间的解．提出了将人工免疫算法和粒子群算法相结合，针对移动 sink 数据收集的路径规划问题寻求近似最优解，仿真结果表明: 与其他算法进行性能比较，所提出的优化算法能够有效减少能耗和缩短遍历路径．     

Evolution of ferronickel particles during the reduction of low-grade saprolitic laterite nickel ore by coal in the temperature range of 900–1250℃with the addition of CaO–CaF2–H3BO3

The method of producing ferronickel at low temperature(1250–1400℃)has been applied since the 1950s at Nippon Yakin Kogyo,Oheyama Works,Japan.Limestone was used as an additive to adjust the slag composition for lowering the slag melting point.The ferronickel product was recovered by means of a magnetic separator from semi-molten slag and metal after water quenching.To increase the efficiency of magnetic separation,a large particle size of ferronickel is desired.Therefore,in this study,the influences of CaO,CaF₂,and H₃BO₃ additives on the evolution of ferronickel particle at≤1250℃were investigated.The experiments were conducted at 900–1250℃with the addition of CaO,CaF₂,and H₃BO₃.The reduction processes were carried out in a horizontal tube furnace for 2 h under argon atmosphere.At 1250℃,with the CaO addition of 10 wt%of the ore weight,ferronickel particles with size of 20μm were obtained.The ferronickel particle size increased to 165μm by adding 10 wt%CaO and 10 wt%CaF₂.The addition of boric acid further increased the ferronickel particle size to 376μm,as shown by the experiments with the addition of 10 wt%CaO,10 wt%CaF₂,and 10 wt%H₃BO₃.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

Electrical properties and Schottky diodes using N-N′diphenyl-1-4phenylenediamine

Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T^−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.     

New Electroweak Model Without a Higgs Particle

A new unified electroweak model is proposed in this paper. In this unified electroweak model, Higgsmechanism is not used, so no Higgs particle exists in the model. In order to keep the masses of intermediate gaugebosons non-zero, two sets of gauge fields will be introduced. In order to introduce symmetry breaking and to help tointroduce the masses of all fields, a vacuum potential is needed. Except for those terms concerning Higgs particle, thefundamental dynamical properties of this model are similar to those of the standard model. And in a proper limit, thismodel will approximately return to the standard model. The purpose of this paper is not to say that the Higgs particledoes not exist in Nature, it is only to prove that, without a Higgs particle, we can also set up a unified electroweak modelwhich is consistent with present experiments.     

Magnetic properties of oxygenated carbon nitride films from RF-discharge in an acetylene, nitrogen, and oxygen mixture environments

Properties of oxygenated carbon nitride films have attracted the attention of physics researchers due to their magnetic and physical properties, as well as for their usefulness in the industry. The free radicals were investigated using electron paramagnetic resonance applied in the study of spin concentration due to the different mechanism of preparation of carbon nitride films by RF-discharge with different kinds of plasma. Unpaired spin concentrations, in the order of 10²⁰ per cm³, were measured and their time recombination dependency was important in those films. The films were grown by plasma enhanced chemical vapor deposition using mixtures of hydrocarbons, N₂ and O₂ in different proportions.