电负性及其在无机化学上的应用

从用电负性来衡量元素在化合物分子中吸引电子的能力的必要性出发，阐述电负性的概念以及阿莱－罗周（Ａｌｌｒｅｄ－Ｒｏｃｈｏｗ）计算电负性标的方法，重点论述了电负性在无机化学上的某些应用．     

Highlights and Prospects of Hyperspherical Approach in Few-Body Quantum-Mechanical Systems

The binding energy of excitonium negative ion for ground ¹S-state in bulk conductors: Ge, Si, CdSe and for green and yellow lines of Cu₂O in hyperspherical coordinate method are found. Angular and radial correlations between electrons are taken into account by the channel functions, which are the eigen-functions of operator on the surface of sphere in six-dimensional sphere. The calculation of energies have been done using the adiabatic and Born-Oppenheimer approximations. In Born-Oppenheimer approximation is enough to give a binding energy with only 1.2% error, in adiabatic approximation this error drops to 0.7 %.     

Quantum Properties of Odd Excited Negative Binomial States of the Radiation Field

The odd excited negative binomial states are introduced using the photon creation operator by repeated application on negative binomialstates. These states interpolate between the odd displaced Fock states and the odd excited pure thermal states. In this paper both squeezing phenomena (normal squeezing and amplitude squared squeezing) are discussed. Besides discussion of the Glauber second-order correlation function, investigations are carried out for the quasi-probability distribution functions (Wigner function and Q-function). Finally the Pegg-Barnett phase probability distribution is computed for these states.     

Generalized binomial and negative binomial distributions of order<Emphasis Type="Italic">k</Emphasis> by the<Emphasis Type="Italic">l</Emphasis>-overlapping enumeration scheme

In this paper, we investigate the exact distribution of the waiting time for ther-th ℓ-overlapping occurrence of success-runs of a specified length in a sequence of two state Markov dependent trials. The probability generating functions are derived explicitly, and as asymptotic results, relationships of a negative binomial distribution of orderk and an extended Poisson distribution of orderk are discussed. We provide further insights into the run-related problems from the viewpoint of the ℓ-overlapping enumeration scheme. We also study the exact distribution of the number of ℓ-overlapping occurrences of success-runs in a fixed number of trials and derive the probability generating functions. The present work extends several properties of distributions of orderk and leads us a new type of geneses of the discrete distributions.     

Zeroth-order phase transitions and Zipf law quantization

From the standpoint of thermodynamic averaging of fission microprocesses, we investigate the origin of radioactive release in an NPP after an accident or after resource depletion. The genesis of the NPP release is interpreted as a new thermodynamic phenomenon, a zeroth-order phase transition. This problem setting results in a problem in probabilistic number theory. We prove the corresponding theorem leading to quantization of the Zipf law for the frequency of a zeroth-order phase transition with different values of the jump of the Gibbs thermodynamic potential. We introduce the notion of hole dimension. __________ Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 150, No. 1, pp. 118–142, January, 2007.     

负反馈电桥在电阻传感器线性化中的应用

本文介绍利用信号流图及梅森公式分析设计负反馈电桥电路,以及在电阻传感器测量线性化中的应用。     

On the Solvability of the Multidimensional Version of the First Darboux Problem for a Model Second-Order Degenerating Hyperbolic Equation

A multidimensional version of the first Darboux problem is considered for a model second-order degenerating hyperbolic equation. Using the technique of functional spaces with a negative norm, the correct formulation of this problem in the Sobolev weighted space is proved.     

负电子亲和势GaAs光电阴极中的三光子激发和发射的理论研究

将三阶微扰理论应用于单晶GaAs半导体,结合与实际相接近的能带结构,得到了GaAs中三光子吸收系数的解析式表达式,在考虑了激发电子的逃逸过程的情况下,进而推导了负电子亲和势GaAs光电阴极中三光子光电发射的发射系数的解析表达式.两表达式得到的理论数值分别与用ns量级脉宽、2.06μm波长的激光测得的GaAs中三光子吸收系数和GaAs(Cs,O)光电阴极中三光子发射系数的实验值相比较,吻合较好.     

有机薄膜器件负电阻特性的影响因素

研究了影响有机染料掺杂聚合物薄膜器件负电阻特性的因素，为探索有机负电阻的机理提供实验依据。实验中制备了多种有机染料掺杂聚合物薄膜器件，研究了有机小分子染料、聚合物基体、薄膜组成及厚度、ITO和聚苯胺阳极等对有机染料掺杂聚合物薄膜器件负电阻特性的影响。在室温、大气环境下，所制备的多种有机染料掺杂聚合物器件在所加电压为3～4V时，观察到明显的负电阻特性，电流峰谷比最大约为8。负电阻现象及峰谷比的大小受膜厚和器件的结构、制备工艺等影响。提出用负电阻和二极管并联组成的等效电路模型解释影响负电阻特性的因素，认为负电阻特性与载流子的不平衡注入有关。在此基础上设计、合成了主链含唔二唑电子传输基团的可溶性聚对苯撑乙烯衍生物，该聚合物兼具空穴和电子传输功能，在空气中具有较稳定的N型负电阻特性。进一步控制相关材料和工艺条件，有可能得到易于控制的负阻效应，开发出新型的有机负电阻器件。