Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Implementing a Two-Photon Three-Degrees-of-Freedom Hyper-Parallel Controlled Phase Flip Gate Through Cavity-Assisted Interactions

Hyper-parallel quantum information processing is a promising and beneficial research field. Herein, a method to implement a hyper-parallel controlled-phase-flip (hyper-CPF) gate for frequency-, spatial-, and time-bin-encoded qubits by coupling flying photons to trapped nitrogen vacancy (NV) defect centers is presented. The scheme, which differs from their conventional parallel counterparts, is specifically advantageous in decreasing against the dissipate noise, increasing the quantum channel capacity, and reducing the quantum resource overhead. The gate qubits with frequency, spatial, and time-bin degrees of freedom (DOF) are immune to quantum decoherence in optical fibers, whereas the polarization photons are easily disturbed by the ambient noise.     

资本市场:缺陷与修正

阐述了目前我国资本市场在体制、结构、功能、机制监管、市场主体等方面存在的缺陷，提出了修正资本市场缺陷的根本出路是制度创新。     

图像相关方法中采用多种子区进行位移测量

在图像相关位移测量方法中一般采用正方型子区搜索中心点的位移.当测量靠近裂纹或缺陷部位的位移时中心型子区失去效果,为了解决这一问题提出了非中心型子区的方法.证明了方法的有效性.认为在相关搜索时测量点既可选定在子区的中心位置,也可选定在非中心位置.进而提出了将测量点确定在子区角点的多种子区的方法.除通常的中心型子区外,至少还有4种子区可以采用,分别是右下角型、左下角型、右上角型和左上角型,这4种子区不但适用于表面裂纹或缺陷部位的位移测量,而且增加了图像有效信息的提取面积.     

V20+离子1s23d-1s2nf的跃迁能和振子强

用全实加关联方法计算了类锂V20+离子1s23d-1s2nf的跃迁能和偶极振子强度.依据量子亏损理论, 确定了1s2nf系列的量子数亏损,用这些作为能量的缓变函数的量子亏损,实现对该Rydberg系列任意高激发态(n≥10)的能量的可靠预言.将这些分立态振子强度与量子亏损理论相结合,得到在电离域附近束缚态间的偶极跃迁振子强度以及束缚态-连续态跃迁的振子强度密度,从而将V20+离子的这一重要光谱特性的理论预言外推到整个能域.     

美国室内设计师资质考试及其对我国的启示

介绍了美国国家室内设计师资格委员会（NCIDQ）关于专业室内设计师的概念，以及NCIDQ室内设计师资质考试的方式及类型，并从室内设计观、室内设计教育等方面分析了这一考试对我国的启示作用，指出室内设计师资质考试制度是公众利益的重要保障，是规范室内设计行业的必要措施．     

求解一类非单调线性互补问题的宽邻域内点方法及其计算复杂性

对于一类非单调线性互补问题给出了一种新的算法——宽邻域内点算法，并讨论了其计算复杂性。     

Stereological simulations of asymmetric polymerization in channels of bile acid inclusion compounds: A detailed analysis of the monomer arrangements in the channels

We studied simulations by computer graphics to estimate the steric mechanism of the asymmetric polymerization of prochiral diene monomers in channels of inclusion compounds of steroidal bile acids, such as deoxycholic acid (DCA) and cholic acid. We applied a hierarchization method to interpret the crystal structures of bile acids, clarifying that the chiral host molecules associated to form characteristic 2₁-helical assemblies with uneven surfaces. A detailed analysis of the uneven channels in a close-packing state indicated that there were many possible arrangements of the monomers in the channels. The plausible arrangements in the channel could explain a previous study, which showed that the polymerization in the DCA channel yielded chiral polymers with a predominant configuration from prochiral diene monomers, such as 2-methyl-trans-1,3-pentadiene. On the basis of such simulation studies of the arrangements of guest monomers in the channel, we examined a plausible steric mechanism for asymmetric inclusion polymerization. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 4648–4655, 2004     

Stress State of Multilayer Thin-Walled Elements with Interfacial Defects of Structure

Based on the discrete-structural theory of thin plates and shells, a calculation model for thin-walled elements consisting of a number of rigid anisotropic layers is put forward. It is assumed that the transverse shear and compression stresses are equal on the interfaces. Elastic slippage is allowed over the interfaces between adjacent layers. The solution to the problem is obtained in a geometrically nonlinear statement with account of the influence of transverse shear and compression strains. The stress-strain state of circular two-layer transversely isotropic plates, both without defects and with a local area of adhesion failure at their center, is investigated numerically and experimentally. It is found that the kinematic and static contact conditions on the interfaces of layered thin-walled structural members greatly affect the magnitude of stresses and strains. With the use of three variants of calculation models, in the cases of perfect and weakened contact conditions between layers, the calculation results for circular plates are compared. It is revealed that the variant suggested in this paper adequately reflects the behavior of layered thin-walled structural elements under large deformations. __________ Translated from Mekhanika Kompozitnykh Materialov, Vol. 41, No. 6, pp. 761–772, November–December, 2005.     

Influence of radiation on thin ZnS-Tb films

Changes in thin zinc-sulfide films under the action of the γ-radiation of Co⁶⁰ are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the spectrum are observed in a short-wave region of the Tb radiation spectrum that corresponds to⁵D₃→⁷F_j transitions. The same modification of the radiation spectrum is characteristic of ZnS films whose crystalline structure is ordered in the course of thermal annealing at a temperature of 350°C. Based on the analysis of the data obtained it is inferred that irradiating the ZnS films with small radiation doses of 10⁴–10⁵ rad leads to the ordering of their crystalline structure due to the elimination of one of the types of structural defects. Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauka Ave., Kiev-28, 252650. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 338–341, May–June, 1997.