Proton conductivity of phosphoric acid derivative of fullerene

The proton conductive property of methano [60] fullerene diphosphoric acid has been investigated under various humidity conditions at the temperature range between 15 and 45 °C. It shows proton conductivity as high as 10⁻² S cm⁻¹ at 25 °C under relative humidity of 95%. Thermal analyses including TG–DTA and thermal desorption mass spectroscopy (TDS) confirm that the compound is thermally stable up to 200 °C. Proton conduction of the compound depends very much on humidity or water content. The logarithmic conductivity at 25 °C is increased linearly with increasing relative humidity. The activation energy (E_a) estimated from the slope of log(σT) vs. 1/T is decreased from 1.08 to 0.52 eV, as the relative humidity is increased from 40% to 75%. The humidity dependence of conductivity is discussed in the light of the observed hydration isotherm.     

Influence of Microstructure and Sintering Routes on Transport Properties of Apatite Materials for Fuel Cells

1 Results Oxy-apatite materials are thought as zirconia-substitutes in Solid Oxide Fuel Cells due to their fast ionic conduction. However, the well known difficulties related to their densification prevent them from being used as such. This study presents strategies to obtain oxy-apatite dense materials and the influence of elaboration route on transport properties. Particular emphasis is put on the microstructure effect on ion conduction. By the combined use of freeze-drying and conventional or spark p...     

NASICON型化合物结构的NMR研究

在水热晶化合成一系列NASICON型化合物的基础上,应用固体高分辨³¹P和²⁹Si MAS NMR,研究了几种NASICON化合物的结构,观察其骨架原子P和Si在结构中的状态及分布,并解释了由于在结构中发生取代作用而引起,Si或P的化学位移的变化.     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

导体壳内外的电场彼此独立的简易证明

本文提供了一种证明导体壳的内外电场彼此独立的简易方法.     

Electronic and Magnetic Properties of the p-NPNN

In this paper, we study the electronic band structure and the ferromagnetic properties of the organic radicalp-NPNN by employing density-functional theory with generalized gradient approximation (GGA) and local-spin densityapproximation (LSDA). The density of states, the total energy, and the spin magnetic moment are calculated. Thecalculations reveal that the δ-phase of p-NPNN has a stable ferromagnetic ground state. It is found that an unpairedelectron in this compound is localized in a single occupied molecular orbital (SOMO) constituted primarily of π* (NO)orbitals, and the main contribution of the spin magnetic moment comes from the π* (NO) orbitals. By comparison, wefind that the GGA is more suitable to describe free radical systems than LSDA.     

Ferromagnetic Properties of Bond-Dilution and Random Positive or Negative Uniaxial Anisotropy Blume-Capel Model

We study the ferromagnetic properties of spin-1 system, which is considered in the frame of the bond dilution and random positive or negative anisotropy Blume-Capel model in the effective field theory and a cutting approximation. The investigation of phase diagrams displays some rich properties of the trajectory of tricritical point, reentrant henomena at low temperatures. Under certain both bond concentrations and random negative anisotropy, there are new transition lines of double tricritical points. So special emphasis is placed on the influence of the bond dilution and random anisotropy on phase diagrams. The magnetizations of the system are also discussed. Some results have not been evealed in previous reports.     

LIGHTWAVE PROPAGATION IN SUBWAVELENGTH HOLES

In this paper we evaluate methods for calculating dispersion relations for waves with wavelengths of the order of hundreds of nanometres propagating in square waveguides with imperfectly conducting walls. The methods considered here are based on those used previously for rectangular dielectric waveguides.     

Ferromagnetically coupled heterobinuclear Cu(Ⅱ)-Ln(Ⅲ) complexes with N,N''''-bis(2-aminoethyl)-oxamido dianion as a bridged ligand

Six novel μ-oxamido heterobinuclear complexes, namely Cu(oxae)Ln(Me2bpy)2-(ClO4)3 (Ln=La, Nd, Gd, Tb, Ho, Er), where oxae denotes N, N'-bis(2-aminoethyl)oxamido dian-ion, Me2bpy is 4,4'-dimethyl-2,2'-bipyridyl, have been synthesized and characterized by elemental analyses, IR, conductivity measurements and electronic spectra. The temperature dependence of the magnetic susceptibility of Cu(oxae)Gd(Me2bpy)2(ClO4)3 has been meaured over the range 4-300 K. The least-squares fit of the experimental susceptibilities yielded J - 1.87 cm-1.The observed Gd(Ⅲ)-Cu(Ⅱ) coupling is ferromagnetic. One plausible mechanism that can cause a ferromagnetic coupling between Gd(Ⅲ) and Cu(Ⅱ) is discussed in terms of spin-polarization.     

The surface and materials science of tin oxide

The study of tin oxide is motivated by its applications as a solid state gas sensor material, oxidation catalyst, and transparent conductor. This review describes the physical and chemical properties that make tin oxide a suitable material for these purposes. The emphasis is on surface science studies of single crystal surfaces, but selected studies on powder and polycrystalline films are also incorporated in order to provide connecting points between surface science studies with the broader field of materials science of tin oxide. The key for understanding many aspects of SnO₂ surface properties is the dual valency of Sn. The dual valency facilitates a reversible transformation of the surface composition from stoichiometric surfaces with Sn⁴⁺ surface cations into a reduced surface with Sn²⁺ surface cations depending on the oxygen chemical potential of the system. Reduction of the surface modifies the surface electronic structure by formation of Sn 5s derived surface states that lie deep within the band gap and also cause a lowering of the work function. The gas sensing mechanism appears, however, only to be indirectly influenced by the surface composition of SnO₂. Critical for triggering a gas response are not the lattice oxygen concentration but chemisorbed (or ionosorbed) oxygen and other molecules with a net electric charge. Band bending induced by charged molecules cause the increase or decrease in surface conductivity responsible for the gas response signal. In most applications tin oxide is modified by additives to either increase the charge carrier concentration by donor atoms, or to increase the gas sensitivity or the catalytic activity by metal additives. Some of the basic concepts by which additives modify the gas sensing and catalytic properties of SnO₂ are discussed and the few surface science studies of doped SnO₂ are reviewed. Epitaxial SnO₂ films may facilitate the surface science studies of doped films in the future. To this end film growth on titania, alumina, and Pt(1 1 1) is reviewed. Thin films on alumina also make promising test systems for probing gas sensing behavior. Molecular adsorption and reaction studies on SnO₂ surfaces have been hampered by the challenges of preparing well-characterized surfaces. Nevertheless some experimental and theoretical studies have been performed and are reviewed. Of particular interest in these studies was the influence of the surface composition on its chemical properties. Finally, the variety of recently synthesized tin oxide nanoscopic materials is summarized.