Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

Preparation and characterization of high-specific-surface-area activated carbons from K2CO3-treated waste polyurethane

An activated carbon with high specific surface area was prepared from polyurethane foam by chemical activation with K2CO3 and the influences of carbonization temperature and impregnation ratio on the pore structure of the prepared activated carbon were investigated. It was found that the specific surface area of the activated carbon was at a maximum value (about 2800 m(2)/g) at a carbonization temperature of 1073 K and at an impregnation ratio of 1.0. It was concluded that the polyurethane foam structure was modified during impregnation by K2CO3, K2CO3 promoted charring during carbonization, and then the weight loss behavior was changed below 700 and above 1000 K, carbon in the char was consumed by K2CO3 reduction, and this led to the high specific surface area. The prepared activated carbon had a very sharp micropore size distribution, compared with the commercial activated carbon having high specific surface area. The amounts of three organic vapors (benzene, acetone, and octane) adsorbed on the prepared activated carbons was much larger than those on the traditional coconut shell AC and the same as those on the commercial activated carbon except for octane. We surmised that the high specific surface area was due to the modification of the carbonization behavior of polyurethane foam by K2CO3.     

光生电压谱方法对ZnSe／GaAs异质结导带偏移的研究

实验采用光生电压谱方法对ＺｎＳｅ／ＧａＡｓ异质结界面的光跃迁进行了观察，在光子能量略低于ＧａＡｓ带边的地方，光生电压谱出现了一个峰，通过分析电子与空穴的分离在界面上形成电偶极层对光生电压谱造成的影响，指出该谱峰对应着界面处电子从ＧａＡｓ价带顶跃迁至ＺｎＳｅ导带底的过程，表明ＺｎＳｅ／ＧａＡｓ异质结的能带排列属于错开型，并得出在温度小于７０Ｋ的低温下ＺｎＳｅ／ＧａＡｓ异质结导带偏移值为１５０ｍｅＶ±     

ZnSe纳米棒的一步水热法制备及其表征

采用一步水热法,由氢氧化钠、单质硒粉与乙酸锌反应,在EDTA存在的条件下,成功制备了立方相ZnSe纳米棒.对所得样品分别通过X射线衍射和透射电子显微镜进行了物相鉴定与形貌观察.在190 ℃,1.2 MPa条件下得到的纳米棒直径约为40～70 nm,长度为360～460 nm.温度超过200 ℃时,形成的为ZnSe纳米颗粒.讨论认为在纳米棒的形成过程中,EDTA起络合剂的作用,并形成了胶束状软模板.该方法为ZeSe及其它半导体纳米棒的合成提供了一种简单易行的方法.     

Monocrystalline ZnSe as an ionising radiation detector operated over a wide temperature range

This work presents an analysis of the main requirements for semiconductor detectors of ionising radiation that can be operated over a wide temperature range. The analysis shows that wide-gap semiconductors with a band gap greater than 2.0 eV are a better option for effective detection of ionising radiation at high temperatures. The results of an experimental investigation into the luminescent, electrical and spectrometric properties of the wide-gap semiconductor ZnSe are shown as an example. Undoped monocrystalline ZnSe has an extremely low leakage current over a wide range of temperatures up to 167 °C and can be used as a radiometric X-ray detector in pulse-counting mode over a wide temperature range up to at least 130 °C.     

A Novel One‐Pot Synthesis of UV‐Blue ZnSe Nanocrystals in Aqueous Solution

Described herein is a novel one‐pot aqueous synthesis of ZnSe nanocrystals has featuring the utilization of Na₂SeO₃ and Zn(AC)₂×2H₂O as Se and Zn source, glutathione (GSH) as stabilizing agent and reducing agent. By this approach, the UV‐blue ZnSe QDs with quantum yield (QYs) up to 19% have been synthesized with a molar ratio of Se/Zn/GSH at 1:4:8.5 under aqueous conditions at 110 °C. XRD and TEM show the ZnSe QDs are zinc cubic structure particles with an average diameter of 3–5 nm.     

ZnSe纳米片晶的可控合成

以乙二胺四乙酸(EDTA)为稳定剂、丁胺(BA)为结构导向模板, 采用水热合成方法制备了尺寸和晶型可控的ZnSe纳米片晶; 利用XRD, TEM, SEM以及紫外-可见漫反射等手段对所得的产物进了表征, 结果表明, 通过改变水热温度和BA用量, 可以实现ZnSe纳米片晶的大小和物相的调控, 并初步分析了其形成过程.     

溶剂热法合成ZnSe纳米球

以乙酸锌和Se粉为原料,环己酮为溶剂,于180 ℃反应24 h制得黄色纳米球ZnSe,其结构和性能经XRD,SEM及TEM表征.     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。