光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

Lead underpotential deposition on Au(110)

The electrochemical underpotential deposition (UPD) of lead on Au(110) was investigated by XPS using a custom‐built ultrahigh vacuum apparatus containing a chamber for electrochemical studies. A two‐step deposition process for lead UPD was confirmed. A large increase in the surface concentration of oxygen was found in solutions containing lead. The presence of lead was detected on the gold surface at all potentials within the range investigated (?500 mV to 1500 mV vs. Ag/AgCl). Degradation of chlorine by x‐rays was observed. The change in surface components with potential was investigated and linked to models of UPD and oxidation. The initial random deposition of lead from solution led to surface disordering. Copyright © 2003 John Wiley & Sons, Ltd.     

Rapid identification of trimethyl and triethyl amines using sulphonic acidic ionic liquids: A time-of-flight secondary ion mass spectrometry study of fragmentation reactions

The time-of-flight secondary ion mass spectrometry (TOF-SIMS) has emerged as a powerful tool for the unswerving detection of biomolecules, in particular, proteins and peptides. To date, there is very little information available on the direct determination of trimethyl/triethyl amines using TOF-SIMS. One major hurdle in this regard is an ultrahigh vacuum system, usually needed in TOF-SIMS, which hampers its usability to trimethyl/triethyl amines owing to their high evaporation rate. We designed an efficient and sensitive protocol for rapid identification and sensitive determination of tertiaryalkyl amines using TOF-SIMS. The amines were derivatized by reaction with 1,4-butane sultone and sulphuric acid sequentially to afford the corresponding sulphonic acidic ionic liquids (ILs). The TOF-SIMS analysis of these task-specific ILs (TSILs) was carried out in both positive and negative polarity. The positive ion mass spectra of TSILs showed sharp fragmented peaks for tertiaryalkyl amines at typical level and up to 10 ppm. The possible mechanism for different fragmentation pathways in positive polarity was discussed.     

基于LE-PO法的特高频输电线路无源干扰求解

基于输电线路无源干扰面模型,提出了采用大面元物理光学法(Large Element-Physical Optics,LE-PO)对特高频无源干扰水平进行求解的思想.根据LE-PO法的假设,对电场积分方程进行了简化.当激励源为平面波时,采用LP-RWG(Linearly Phased-Rao Wilton Glisson)基函数对铁塔表面感应电流进行离散,推导了输电线路铁塔散射场求解的表达式.采用相关文献算例分析了LE-PO法求解输电线路无源干扰时的计算精度和计算资源.研究表明,LE-PO法的求解精度与PO法一致,但能节省大量的计算资源.     

Total analysis of surface structure and properties by UHV transfer system

We have developed an ultrahigh-vacuum (UHV) complex sample preparation and analysis system, which realizes a reliable surface science analyzing various characters on an identical surface. The system contains three sample-preparation-and-characterization chambers and five analysis chambers. They are (1) an electronic-properties-characterization chamber, (2) a magnetic-properties-characterization chamber, (3) an organic-molecule chamber, (4) UHV SEM, (5) a high-energy-resolution angle-resolved photoelectron spectrometer, (6) a high-energy-resolution display-type spherical mirror analyzer, (7) a room-temperature (RT) STM, and (8) an optical-properties characterization chamber. A special sample holder is used with six electrodes on it, which enables accurate temperature measurement of a sample by connecting a thermocouple directly to the sample even if it is transferred. Four other electrodes can be used for construction of various circuits including evaporators. Some examples are shown.     

High resolution imaging of contact potential difference using a novel ultrahigh vacuum non-contact atomic force microscope technique

An ultrahigh vacuum scanning Kelvin probe force microscope (UHV SKPM) based on the gradient of electrostatic force was developed using the technique of a UHV non-contact atomic force microscope (NC-AFM) capable of atomic level imaging, and used for simultaneous observation of contact potential difference (CPD) and NC-AFM images. The CPD images with a potential resolution of less than 10 meV were observed in the UHV SKPM, demonstrating an atomic level resolution. The change of potential corresponding to the charges on the insulated surface of polypropylene have been observed in UHV SKPM. We also demonstrated a reliable method to obtain the CPD from the bias voltage dependence curves of the frequency shift in all of the scanning area. The results are consistent with comparing the barrier height images in that the work functions of adatoms are greater than the work function of corner holes.     

Visible photoluminescence from a-Si : H/SiO2 superlattices fabricated by UHV evaporation

Hydrogenated amorphous-Si/SiO₂ (a-Si:H/SiO₂) superlattices with different a-Si : H thickness in the range of a few nanometers have been fabricated by ultra high vacuum evaporator (UHV evaporator). The photoluminescence (PL) of our superlattices is observed in the visible spectral region and the peak energy shifts to higher energy as the a-Si : H layer thickness decreases. The temperature dependence of the PL spectra reveals four sub-bands by fitting. Bands at 2.2, 1.9, 1.65 and 1.45 eV are detected and are attributed to E′δ centers, nonbridging-oxygen–hole centers (NBOHC), Si/SiO₂ interface and a-Si : H layer, respectively. We explain the overall blueshift of the PL spectra by the modification of the contribution of these sub-bands.     

In situ monitoring of nucleation and evolution of Ge nanodots on faintly oxidized Si(1 1 1) surfaces

We have investigated the nucleation and evolution of germanium (Ge) nanodot (ND)s taking place while depositing Ge onto the silicon (Si) (1 1 1) surfaces with ultra-thin Si oxide films by using ultra-high vacuum in situ high-resolution transmission electron microscopy in the profile-imaging geometry. Various types of growth phenomena such as nucleation, growth and coalescence of Ge NDs have successfully been observed. The results show that the growth phenomena of the Ge NDs are dramatically rapid after their size reaches the size of the critical nucleus. The critical nucleus size estimated from a model using the cohesive energy of the Ge NDs has been consistent with observed one.     

基于弧垂效应的特高压线路无线电干扰研究

在电力需求日益增加而能源资源及负荷分布极不均衡的国情下,对特高压输电技术的深入研究和完善刻不容缓,其中特高压输电线路无线电干扰水平的准确评估和控制极为关键.目前特高压交流线路无线电干扰研究方法中使用较普遍的是激发函数法,该文采用一种更适合我国国情的激发函数对特高压线路无线电干扰进行研究,在2维模型的基础上用考虑弧垂的等效分析法进行了算例仿真,并与已运行的1 000 kV晋东南-南阳-荆门特高压交流示范工程线路无线电干扰实测数据进行对比,发现考虑弧垂的等效分析法更适用于实际工程,说明了实际特高压线路工程无线电干扰预测中考虑弧垂的必要性.最后分析了无线电干扰影响因素并提出了相应的减弱干扰措施,可为国家特高压输电线路以及杆塔的设计选型提供重要参考.     

1000kV干字型铁塔风振系数研究

针对福州-厦门1 000 kV干字型耐张铁塔的结构抗风性能,在ANSYS软件中建立杆梁混合模型,由AutoCAD铁塔组装图计算挡风面积,采用AR法模拟风速时程并计算风荷载,通过时域法完成铁塔风振系数计算.仿真结果表明:与建筑规范相比,干字型铁塔的风振系数随高度增加而呈非线性、曲折形增长,其分布特性与铁塔质量和挡风面积的比值有关;由AutoCAD铁塔组装图计算挡风面积与填充系数为0.192 5时的经验公式计算结果较为接近,但是在横隔面处二者面积计算值差异比较大,也导致两种方法所得到的风振系数在横隔面处存在较大差异.