Giant magneto resistance and temperature coefficient of resistance in Sm0.55Sr0.30Ag0.15MnO3 perovskite

Silver ions substituted samarium strontium manganite (Sm0.55Sr0.30Ag0.15MnO3) pervoskite was synthesized by using respective oxides in stoichiometric ratio through solid state reaction. The as-prepared sample was characterized by various analytical techniques to confirm its formation and understand the effect of monovalent silver ions in pervoskite lattice. X-ray diffraction pattern confirms the single phase formation while grain morphology in SEM image indicates good connectivity among the grains. The enhancement in metal to insulator transition temperature shows quenched disorder and magnetoresistance phenomena. The magnetoresistance (MR) and temperature coefficient of resistance (TCR) emerge from grain growth factor and homogeneity induced by Ag+ ions in the lattice. The reduction in hysteresis loss resulted from antiferromagnetic - ferromagnetic (TN) and ferromagnetic - paramagnetic (Tc) transitions reveals the removal of disorder in perovskite lattice by Ag+ ions substitution. This increases the magnetic moment across distinct ions on the applying magnetic field. The rise in MR% (~99%) with silver doping emerging from smooth spin tunneling of the grains across the boundary and suppression of the disordered magnetic fluctuations with increase in magnetic field has been reported. The present compound exhibits the first order nature of magnetism and observed first time the highest value of TCR ~ 95%.     

La0.7-xDyxSr0.3MnO3(0.00≤x≤0.70)的TCR研究

研究了La位Dy掺杂对La0.7-xDyxSr0.3MnO3(0.00≤x≤0.70)电阻温度系数(TCR)的影响.实验结果表明:Dy掺杂将引起电阻率曲线的急剧变化,导致出现大的TCR;随Dy掺杂的增加,TCR在x=0.30出现峰值,然后随掺杂量的增加逐步降低.体系出现大的TCR,来源于Dy掺杂引起的晶格畸变和额外磁性耦合.     

CRISPR-Cas9系统定向编辑TCR基因的sgRNA筛选

为构建靶向T细胞抗原受体(T Cell Receptor,TCR)基因的CRISPR-Cas9基因组编辑系统,基于p X458质粒构建靶向TCR基因β链C区的CRISPR-Cas-sgRNA质粒,将其转染Hep G2细胞系,用流式细胞术检测转染效率;转染48 h后提取Hep G2细胞基因组DNA,扩增含有编辑位点的片段,测序分析该片段的峰图改变;对出现双峰的扩增片段做T-A克隆后测序分析,确定基因编辑发生的位置,并结合转染效率计算基因编辑效率.结果表明,成功构建含有3种sgRNA序列(N1、N2、S1)的p X458-sgRNA质粒,其转染效率分别为38.5%(N1)、39.7%(N2)和24.2%(S1);基因组PCR产物测序分析发现,S1组扩增片段在打靶位置出现杂峰;T-A克隆测序发现,20克隆有4个发生了基因编辑(20%),结合转染效率(24.2%)可知,编辑效率约为83%.可见,本文成功构建靶向TCR基因的CRISPR-CassgRNA质粒,并鉴定出基因编辑效率较高的一种sgRNA序列.     

Ru(bpy)32+-Enabled Cell-Surface Photocatalytic Proximity Labeling toward More Efficient Capture of Physically Interacting Cells

Intercellular proximity labeling has emerged as a promising approach to enable the study of cell-cell interactions (CCIs), but the efficiency of current platforms is limited. Here, we use Ru(bpy)₃²⁺ to construct an efficient photocatalytic proximity labeling (PPL) system on the cell surface that allows the highly discriminative CCI detection with spatiotemporal resolution. Through the mechanism study and quantitative characterization on living cells, we demonstrate that the singlet-oxygen (¹O₂) mechanism is more efficient and specific than the single electron transfer (SET) mechanism in Ru-mediated PPL. Ru(bpy)₃²⁺ catalysts with different cell-anchoring moieties are prepared to facilitate the catalyst loading on primary cells. Finally, based on this system, we develop a “live” T cell receptor (TCR) multimer with TCR-T cells that could sensitively identify and discriminate cells presenting antigens of different affinity, providing a powerful tool to better understand the heterogeneity of antigen presenting cells.     

一种带有时序参数的分组密码

通过将系统时间和数据组号混合到轮密钥之中,可以有效地防止一些对分组密码算法的攻击．文中探讨了这类实用的密码算法方案的一般模式．由于变更部分轮密钥通常比若干轮变换快很多,这类方案会有明显的效率优势．在安全方面,由于加密时所有明文组几乎都各自使用了不同的轮密钥,而绝大数攻击方法需要一定数量相同密钥加密的明密文对,从而使这些攻击方法不能奏效．这也许会导致这类带有时间组号参数的分组算法在减少迭代轮情况下仍然是安全的．做为例子,给出了一个在安全和效率方面均有良好性能的密码算法TCR6．     

射频磁控溅射制备氧化钒薄膜的研究

氧化钒（VOx）薄膜是一种广泛应用于红外热成像探测的薄膜材料,研究VOx薄膜的制备工艺、获取高电阻温度系数（TCR）的VOx薄膜具有重要意义。以高纯金属钒作靶材,采用射频磁控溅射的方法在室温下制备了VOx薄膜。主要研究了氩氧流量比以及功率等工艺参数对薄膜TCR的影响,获得了较好的工艺参数。采用万用表和X射线光电子能谱仪（XPS）分别测试了不同条件下射频磁控溅射法制备的VOx薄膜的电阻特性和薄膜成分,测试结果表明,采用所获得的较好工艺参数制备的VOx薄膜TCR值大于1.8%。     

一种高温下测量薄膜电阻温度特性的方法

介绍了Rymaszewski四探针法测薄膜方块电阻原理,设计并搭建了可测室温到550℃的四探针测试仪。该系统可在保护气体下变温测量薄层电阻,弥补了四探针法在较高温度测量薄膜电阻率的不足。制备并测试了多晶硅及铂薄膜的电阻温度特性,用多项式拟合了在该温度范围内电阻温度系数,并分析了方法可靠性。     

一种新型的红外成像材料

基于超大磁阻(CMR)材料在绝缘体—金属转变(I—M)点附近的巨大电阻变化，本研究了La位Gd掺杂对La0.7-xGdxSr0.3MnO3(x=0.20、0.30、0.40、0.50)电阻温度系数(TCR)的影响。实验结果表明：Gd掺杂将引起电阻率曲线的急剧变化，导致出现大的TCR；而且随Gd掺杂的增加，TCRR在x＝0．30出现峰值，然后随掺杂量增加逐步降低，大的TCR行为将成为新型的红外成像材料。     

静止无功功率补偿装置设计

阐述了静止无功补偿装置（SVC）的工作原理和控制模式，将设计的实用方案成功用于某轧钢厂无功补偿和谐波滤波改造，并指明了这类静止无功补偿装置的不足。