基于Si掺杂Sb2Te3薄膜的相变存储器研究

采用磁控三靶(Si，Sb及Te)共溅射法制备了Si掺杂Sb₂Te₃薄膜，作为对比，制备了Ge₂Sb₂Te₅和Sb₂Te₃薄膜，并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明，Si掺杂提高了Sb₂Te₃薄膜的晶化温度以及薄膜的晶态和非晶态电阻率，使得其非晶态与晶态电阻率之比达到10⁶，提高了器件的电阻开/关比；同Ge₂Sb₂Te₅薄膜相比，16at% Si掺杂Sb₂Te₃薄膜具有较低的熔点和更高的晶态电阻率，这有利于降低器件的RESET电流.研究还表明，采用16at% Si掺杂Sb₂Te₃薄膜作为存储介质的存储器器件原型具有记忆开关特性，可以在脉高3V、脉宽500ns的电脉冲下实现SET操作，在脉高4V、脉宽20ns的电脉冲下实现RESET操作，并能实现反复写/擦，而采用Ge₂Sb₂Te₅薄膜的相同结构的器件不能实现RESET操作. 关键词： 相变存储器 硫系化合物 2Te₃薄膜')" href="#">Si掺杂Sb₂Te₃薄膜 SET/RESET转变     

Si掺杂Al_2O_3电子结构的第一性原理计算

本文采用第一性原理对纯Al2O3和Si掺杂的Si0.167Al0.833O1.5,Si0.25Al0.75O1.5晶体体系的能带结构、态密度进行了计算分析.结果发现:随着Si在Al2O3晶体中所占比例的增加,体系能隙变小,在Si0.25Al0.75O1.5晶体体系中能隙已降到2.5 e V,表明该体系为半导体材料;而在掺杂的体系中有数条分散的能带穿过了费米能级,即可以预测该掺杂体系有特别的光电性质;同时对比纯Al2O3和Si掺杂的Si0.167Al0.833O1.5,Si0.25Al0.75O1.5晶体体系的总态密度,发现掺杂体系的价带和导带向低能区域移动.     

Effects of Si-doped GaAs layer on optical properties of InAs quantum dots

We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs) with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the position of the Si-doped GaAs layer. For type A samples the Si-doped GaAs layer is grown below the QDs, whereas for type B samples the Si-doped GaAs layer is grown above the QDs. For both types of samples the excited-state emissions caused by state filling are observed in photoluminescence (PL) spectra at high excitation power densities. The bandgap renormalization of QDs can be found from the shift of the PL peak energy. Particularly, for type A samples the Si atoms act as nucleation centers during the growth of InAs QDs on the Si-doped GaAs layer and affect the density and the size of the QDs. The Si-doped GaAs layer in type A samples has more effects on the properties of QDs, such as state filling and bandgap renormalization than those of type B samples.     

硅掺杂氮化硼纳米管的制备及其光学性质

通过高温热解聚合物前驱体方法制备Si掺杂BN纳米管. 采用扫描电子显微镜（SEM）和透射电子显微镜（TEM）对样品的结构与形貌进行表征, 结果表明, 样品属于一端开口的竹节状BN纳米管, 通过变温光致发光谱及喇曼光谱研究了Si掺杂BN纳米管的光学性质.      

High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga_2O_3 thin film

Si-doped β-Ga_2O_3 films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W~(-1). The Si-doped β-Ga_2O_3-based PD is promised to perform solar-blind photodetection with high performance.     

水热法制备硅掺杂纳米TiO_2的光催化性能

以TiCl_4和Na_2SiO_3为原料,采用水热法制备了一系列掺杂Si的纳米TiO_2粉体.采用X射线衍射分析(XRD),红外光谱(FT-IR),紫外可见吸收光谱(UV-vis DRS)对样品进行了表征.结果表明:掺杂Si的TiO_2样品粒径较小,样品中锐钛矿的百分含量有了一定提高.同时发现在Si掺杂的样品中有Ti-O-Si键的存在.掺杂Si的TiO_2样品的光催化活性较未掺杂样品有了较大提高.并讨论了Si掺杂提高TiO_2光催化活性可能的原因.     

Urea Production on Metal-Free Dual Silicon Doped C9N4 Nanosheet Under Ambient Conditions by Electrocatalysis: A First Principles Study

The development of cheap, eco-friendly electrocatalysts for urea synthesis which avoids the traditional nitrogen reduction to form ammonia, is very important to meet our growing demand for urea. Herein, based on density functional theory, we propose a novel electrocatalyst (dual Si doped C₉N₄ nanosheet) composed of totally environmentally benign non-metal earth abundant elements, which is able to adsorb N₂ and CO₂ together. Reduction of CO₂ to CO happens, which is then inserted into activated N−N bond, and it produces *N(CO)N intermediate, which is the crucial step for urea formation. Eventually following several proton coupled electron transfer processes, urea is formed under ambient conditions. The limiting potential value for urea formation is found to be lower than that of NH₃ formation and HER (hydrogen evolution reaction). Moreover, the faradaic efficiency of our proposed catalyst system is 100 % for urea formation, which suggests greater selectivity of urea formation over other competitive reactions.     

Evaluation of bacterial adhesion on Si-doped diamond-like carbon films

Diamond-like carbon (DLC) films as biomaterial for medical devices have been attracting great interest due to their excellent properties such as hardness, low friction and chemical inertness. It has been demonstrated that the properties of DLC films can be further improved by the addition of silicon into DLC films, such as thermal stability, compressive stress, etc. However no research work on anti-bacterial properties of silicon-doped diamond-like carbon films has been reported. In this paper the surface physical and chemical properties of Si-doped diamond-like carbon films with various Si contents on 316 stainless steel substrate prepared by a magnetron sputtering technique were investigated, including surface topography, surface chemistry, the sp³/sp² ratio, contact angle, surface free energy, etc. Bacterial adhesion to Si-doped DLC films was evaluated with Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus which frequently cause medical device-associated infections. The experimental results showed that bacterial adhesion decreased with increasing the silicon content in the films. All the Si-doped DLC films performed much better than stainless steel 316L on reducing bacterial attachment.     

Si掺杂锐钛矿TiO2的第一性原理研究

为了研究Si掺杂对锐钛矿TiO2的电子蛄构和光催化性能的影响,利用基于第一性原理的密度泛函理论计算了纯TiO2及Si掺杂TiO2的杂质形成能、能带结构及态密度.研究蛄果表明,Si的掺杂位置与制备条件有关,富钛和富氧条件下,Si最容易代替TiO2中Ti的位置.几何优化后Si掺杂TiO2超晶胞的晶格参数和晶胞体积都发生一定...