Investigation of the effect of CdCl2 processing on vacuum deposited CdS/CdTe thin film solar cells by DLTS

Thin film CdS/CdTe solar cells have been prepared by conventional vacuum deposition technique. Deep level transient spectroscopy (DLTS), temperature and frequency dependent capacitance-voltage (C-V) measurements were utilised to investigate the performance limiting defect states in the CdTe layer subjected to the post deposition treatments such as CdCl₂-dipping and/or annealing in air. Five hole traps, all of which have been previously reported in the literature, were identified in as-grown CdTe at 0.19, 0.20, 0.22, 0.30 and 0.40 eV above the valence band. A single hole trap level has been evidenced at 0.45 eV after both post deposition heat and CdCl₂ treatments.     

电化学原子层外延及Te,CD元素欠电势沉积研究

阐述了一种处延沉积化合物半导体的新方法－电化学原子层外延（ＥＣＡＬＥ）并对其基础欠电势沉积（ＵＰＤ）进行了讨论,着重研究了Ⅱ,Ⅳ族元素Ｃｄ,Ｔｅ的电化学欠电势沉积,根据电化学循环伏安曲线,研究了Ｔｅ和Ｃｄ在Ｓｉ－Ａｕ（１１１）基片上以及交替生长过程中ＵＰＤ沉积电位及相应覆盖度值,由此确定了在Ｓｉ－Ａｕ（１１１）衬底上交替沉积Ｔｅ,Ｃｄ原子层的方法,在此基础上,初步进行了多次交替沉积,并用ＡＦＭ与Ａ     

Prototype of immunochromatographic assay strips using colloidal CdTe nanocrystals as biological luminescent label

Colloidal semiconductor nanocrystals have attracted considerable attention as a novel biological luminescent label. The bioinorganic conjugates of luminescent CdTe nanocrystals and protein, including CdTe/BSA (bovine serum albumin) and CdTe/MAB (mouse monoclonal antibody against hepatities B surface antigen), were formed via electrostatic/coordination self-assembly. Pure CdTe nanocrystals, CdTe/BSA and CdTe/MAB were used in the immunochromatographic assay experiments, respectively. And the results indicated that CdTe nanocrystals could be used and developed as a novel label with good stability, high sensitivity and facile determination of several analytes in immunochromatographic assay strips.     

XPS定量分析及其在CdTe（Ⅲ）面识别化学物种中的应用

我们用谱仪能量传输函数修正的相对原子灵敏度因子获得了ＸＰＳ定量数据。通过将定量结果与结合能的化学位移相结合的方法，分析了ＣｄＴｅ表面的两个氧化过程，结果表明，机械抛光样品表面的构成是：６６％ＣｄＴｅ，２８．９％的Ｃｄ（ＯＨ）２和５．１％ＴｅＯｘ（Ｘ＞２），而经化学抛光的表面构成是∶８４．４％的ＴｄＴｅＯ４和１５．６％ＴｅＯｘ（Ｘ＞１）。     

串联电阻对CdS/CdTe太阳电池稳定性的影响

在温度循环下对CdS／CdTe太阳电池的性能作了研究，测定了其I-V特性曲线，计算了串联电阻和并联电阻．结果表明：经温度循环后，串联电阻增加，并联电阻下降，导致转换效率下降，用ZnTe作背接触层可改善电池性能和其稳定性．     

Stable structure and effects of sulfur in CdTe/CdS heterojunctions

Structural and electronic properties of S in the CdTe/CdS(0001) interface are studied using the density functional theory. The interstitial S atom may induce the inversion of the surface Cd atoms and sublayer Te atoms of the Cd‐terminated surface, while S atoms may adsorb at the top sites, substitute Te atoms or accumulate at the voids inside the Te‐terminated (111) CdTe surface. Isovalent substituting S for Te in the CdTe(111)/CdS(0001) heterojunctions can reduce the strain arising from lattice mismatch and cause a reduction of interface states, so it may be better for solar cells. Copyright © 2011 John Wiley & Sons, Ltd.     

Synthesis of cysteamine-coated CdTe quantum dots and its application in mercury (II) detection

High-quality cysteamine-coated CdTe quantum dots (CA-CdTe QDs) were successfully synthesized in aqueous phase by a facile one-pot method. Through hydroxylamine hydrochloride-promoted kinetic growth strategy, water-soluble CA-CdTe QDs could be obtained conveniently in a conical flask by a stepwise addition of raw materials. The photoluminescence quantum yield (PL QY) of the obtained QDs reached 9.2% at the emission peak of 520 nm. The optical property and the morphology of the QDs were characterized by UV–vis absorption spectra, photoluminescence spectra (PL) and transmission electron microscopy (TEM) respectively. Furthermore, the fluorescence of the resultant QDs was quenched by copper (II) (Cu²⁺) and mercury (II) (Hg²⁺) meanwhile. It is worthy of note that to separately detect Hg²⁺, cyanide ion could be used to eliminate the interference of Cu²⁺. Under the optimal conditions, the response was linearly proportional to the logarithm of Hg²⁺ concentration over the range of 0.08–3.33 μM with a limit of detection (LOD) of 0.07 μM.     

Effect of thickness of CdTe/Ge heterojunction photodetectors on optoelectronic properties

The influence of the thickness of CdTe/n-Ge heterojunction photodetectors on I–V curves was studied experimentally and theoretically. The thicknesses of the CdTe thin films were 110, 130, 150, and 200 nm. The power intensity of illumination was 150 mW/cm². Increasing the thickness led to an increase in photocurrent.     

Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an important midgap level E_C−0.74 eV in CdTe and Cd_1−xZn_xTe (x<0.1), the materials of choice in today’s X-ray and gamma ray detector technology. We confirmed the direct correlation between Y-emission and the dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10⁵ cm⁻²). Our results correlate with recent findings that dislocation-induced defects and their clusters degrade charge collection in radiation detectors. Photoluminescence of midgap levels can serve as a tool to identify areas of degraded performance in semi insulated CdTe and CdZnTe crystals for radiation detectors.