Highlights and Prospects of Hyperspherical Approach in Few-Body Quantum-Mechanical Systems

The binding energy of excitonium negative ion for ground ¹S-state in bulk conductors: Ge, Si, CdSe and for green and yellow lines of Cu₂O in hyperspherical coordinate method are found. Angular and radial correlations between electrons are taken into account by the channel functions, which are the eigen-functions of operator on the surface of sphere in six-dimensional sphere. The calculation of energies have been done using the adiabatic and Born-Oppenheimer approximations. In Born-Oppenheimer approximation is enough to give a binding energy with only 1.2% error, in adiabatic approximation this error drops to 0.7 %.     

Universal elementary constituents of potential transformations shifting waves (qualitative theory)

It is shown that the potential perturbation that shifts a chosen standing wave in space is a block of potential barrier and well for every wave bump between neighbouring knots. The algorithms shifting the range of the primary localization of a chosen bound state in a potential well of finite width are as well applicable to the scattering functions if states of the continuous spectrum are considered as bound states normalized to unity but distributed on an infinite interval with vanishing density. The potential perturbations of the same type on the half-axis concentrate the scattering wave at the origin, thus creating a bound state embedded into the continuous spectrum (zero width resonance).     

Effect of the Electron-LO-Phonon Coupling on an Exciton Quantum Dot

The influence of the electron-LO-phonon coupling on energy spectrum of the low-lying states ofan exciton inparabolic quantum dots is investigated as a function of dot size. Calculations are made by using the method of few-bodyphysics within the effective-mass approximation. A considerable decrease of the energy in the stronger confinement rangeis found for the low-lying states of an exciton in quantum dots, which results from the confinement of electron-phononcoupling.     

正常金属/超导/正常金属双垒隧道结中的量子相干输运

考虑到量子相干效应和界面散射效应 ,利用 L ambert理论模型 ,计算正常金属 /绝缘层 /超导 /绝缘层 /正常金属双垒隧道结中的准粒子输运系数和隧道谱。研究表明 :( 1)所有的准粒子输运系数和电导谱在超导能隙之上都随能量作周期性振荡 ,其振荡周期依赖于超导层的厚度 ;( 2 )在超导能隙之上 Andreev反射系数随能量呈现周期性消失现象 ;( 3)在绝缘层势垒强度取很大的隧道极限下 ,超导层中会形成一系列的准粒子束缚态 ,其位置由量子化条件决定 ;( 4)界面散射效应不仅能压低各子能隙电导峰 ,还能使子能隙电导峰劈裂为两个峰。     

耗散准模腔场与激子相互作用的量子统计性质

研究了耗散准模腔场与激子相互作用的量子统计特性 ,给出了当腔场初始处于真空态而激子处于真空态与粒子数态大于 2的叠加态时的腔场与激子能量交换的表达式。研究结果表明 ,激子和腔场可以呈现亚泊松分布状态 ,激子与腔场之间的关联是经典的 ,不存在Cauchy Schwartz不等式的偏离现象。     

Electromagnetic properties of strange baryons in a relativistic quark model

We present some of our results for the electromagnetic properties of excited Σ hyperons, computed within the framework of the Bonn constituent-quark model, which is based on the Bethe-Salpeter approach. The seven parameters entering the model are fitted against the best-known baryon masses. Accordingly, the results for the form factors and helicity amplitudes are genuine predictions. We compare with the scarce experimental data available and discuss the processes in which Σ ^*'s may play an important role.     

磁场和杂质对激子低能谱的效应

探讨了磁场B和杂质对二维激子低态能谱的效应.杂质被固定在z轴上且与激子所在的平面的距离为d.用直接对角化方法获得了激子低态能量E随B和d的演化.当d一定时,对于中性杂质(或者无杂质) 和带正电杂质,E随B的增加而增加.而对于带负电杂质,激子的角动量L等于0时,能量E曲线上升;L等于1、2、3时,能量E曲线先下降后上升.当B一定时,对于带电杂质,E先随d增加而急剧增加,后随d增加而几乎不变.     

森谱的界

设λ_k(F)是树或者森的第k大特征值,[x]是不超过x的最大整数,q是F的边独立数.本文证明了:对于1≤k≤[(q 1)/2]有λ_k(F)≥1,并且这个下界是最好可能的;对于1≤i≤[q/2],若q为偶数,则有λ[(q 1)/2] i(F)≥2cos((2iπ)/(4i 1)),若q为奇数,则有λ_([(q 1)/2] i)(F)≥2cos(((2i 1)π)/(4i 3)),     

Renormalization Effects in the Spectrum of a Coherently Driven Exciton–Biexciton System

Starting from the total Hamiltonian of an excited exciton–biexciton system, nonresonant renormalizations in the electronic spectrum of a coherently driven direct semiconductor are considered. Stringent group-theoretical inclusion of the particle spin in the Hamiltonian allows one to account for the dependence of different renormalization effects on polarizations of the incident laser fields. On the example of circularly polarized driving and probing pulses it is shown that the kind of observed renormalization is defined by the pump-and-probe polarization geometry. Thus, the exciton optical Stark effect must appear in the case of co-circular pump-and-probe, whereas a mixing of the polariton and biexciton spectra is possible only in the case of counter-circular pump-and-probe. The polariton--biexciton dispersion renormalization may manifest itself as synchronous splittings of the exciton--polariton and biexciton spectra under resonant pumping at a frequency of the polariton--biexciton transition, or in their shifts in opposite directions under near-resonant pumping. The mechanisms of both kinds of renormalization effects are analyzed, and the dependence of their characteristics on the pump parameters and microscopic parameters of the exciton–biexciton–photon system is established. An evaluation of the characteristics shows that the effect of polariton–biexciton dispersion renormalization dominates in the spectra of semiconductors with stable biexciton formation. Results of the theoretical study provide an adequate explanation of available experimental data.     

Absorbance spectra of polycrystalline samples and twinned crystals of oligothiophenes

We propose optical absorption technique at oblique incidence as one of the spectroscopic tools that allow experimentally recognizing the macroscopic order and structural features of molecular solids of conjugated molecules, from single crystals to polycrystalline or twinned samples. We apply this spectroscopy to quaterthiophene as representative of a wide class of materials that usually possess optical transitions of Frenkel exciton origin with strong directional dispersion. The comparison between experimental and simulated data gives evidence of the high sensitivity of this technique for determining quantitatively the polycrystallinity of the measured samples, whose domains may show mirror-like orientation of the unit cell with respect to one of its faces.Frenkel exciton; Oligothiophene, Optical properties