我国实现蓝宝石衬底氧化锌二极管室温电致发光

据《科学时报》近日报道，由中科院长春光机所、厦门大学共同承担的国家自然科学基金委员会重点项目“氧化锌基单晶薄膜材料、物性及器件研究”，日前正式通过了国家自然科学基金委信息科学部专家组的中期检查验收。该项目在国内率先获得了氧化锌同质结的电致发光，并且在国际上首次实现了蓝宝石衬底生长的氧化锌二极管室温电致发光，为今后氧化锌蓝紫外发光和激光二极管的发展奠定了实验基础。     

激光淀积YBa2Cu3O7外延超导薄膜

利用准分子脉冲激光成功地在(100)SrTiO_3与(100)Y-ZrO_2衬底上淀积了 YBa_2Cu_3O_7超导薄膜,T_c(R=0)>90K,J_c(T<82K)>1×10~6A/cm~2.研究了衬底温度对外延YBa_2Cu_3O_7薄膜超导性能及结构的影响.     

Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

Effect of Alumina and Chromium Interlayers on Microstructures and Optical Properties of Thin Ag Films on Glass Substrates

Effects of alumina and chromium interlayers on the microstructure and optical properties of thin Ag films are investigated by using spectrophotometry, x-ray diffraction and AFM. The characteristics of Ag films in Ag/glass, Ag/l2O3/glass and Ag/Cr/glass stacks are analysed. The results indicate that the insertion of an Al2O3 or Cr layer decreases the grains and influences the reflectance of Ag films. The reflectance of the Ag film can be increased by controlling the thickness of alumina interlayer. The stability of Ag films is improved and the adhesion of Ag films on glass substrates is enhanced by alumina as an interlayer.     

Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering

CuInSe2(CIS) nanoparticle thin films have been prepared by radio frequency reactive magnetron sputtering from compound ternary fan-shaped targets on low-temperature substrates with pure argon gas as the atmosphere.The stoichiometry of the ternary compound semiconductor quantum dots can easily be controlled by the ratios of the ternary elements and sputtering parameters.CIS nanoparticle thin films regularly shaped and distributed reasonably uniform in size on substrates of 7059 glass etc can be grown in this way.The average particle diameter can be varied between 40-80 nm by an appropriate choice of the substrate temperature,power density and total CIS coverage.the optical and electrical properties of the CIS films have also been studied.     

Self-Assembly of Micro-Parts onto Si Substrates at Liquid-Liquid Interface

We report a new approach for the self-assembly of cuboid micro-parts onto Si substrates to construct three-dimensional microstructures. To perform assembly, the Si substrates are prepared with a deep cavity array as binding sites. An aggregate composed of hundreds of uniformly aligned micro-parts is formed at the C10F18-H2O interface. The micro-parts are arranged by passing the substrate through the aggregate of micro-parts, thus the micro-parts are left on the substrate, and then the substrate is vibrated ultrasonically in the solution, making it possible for the micro-parts to fall into the cavities on the substrate. Finally the substrate is pulled out of the solution after assembly. This technique could give a high yield of up to 70%, providing a new method for micro-assembly.