面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

晶格失配对异质外延超薄膜生长中成核特性的影响

利用动力学蒙特卡罗方法模拟了异质外延超薄膜生长中的成核过程.研究了薄膜与衬底的晶格失配对超薄膜生长中成核密度、平均核尺寸、标度关系及生长模式的影响.结果发现产生压（张）应变的晶格负（正）失配使生长过程更早（迟）从成核区进入过渡区，失配越大，这一效应越明显.在相同的沉积条件下，负失配导致超薄膜形成较低的成核密度与较大的平均核尺寸，而正失配则相反.成核密度满足标度关系Ns≈(F/D)χ，随着失配度从-0.04增加到0.02，标度系数χ从0.37逐渐减小到0.33，对应超薄膜生长过程从包含二聚体扩散模式转变到无 关键词： 薄膜生长 成核 晶格失配 蒙特卡罗模拟     

光致聚合材料收缩对谱面全息存储的影响

为了分析光致聚合材料记录的谱面全息图在再现过程中发生"擦除"现象,将谱面全息图看作由不同角谱的物光与参考光在光致聚合材料内形成的不同倾斜角度的光栅总和.使用二波耦合理论分析全息图像再现时,由于光致聚合材料发生形体收缩,不同倾斜程度的光栅发生不同程度的变形,产生不同程度的布拉格失配带来的衍射效率变化.理论分析表明,材料收缩越严重,全息图再现质量越差.实验证明了理论分析的正确性,并表明使用无收缩光致聚合材料可以消除这种"擦除"现象.     

PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.     

锁相环中低电流失配电荷泵的设计

提出了一种应用于低供电电压低相位噪声锁相环系统的低电流失配的电荷泵电路。仿真结果表明,输出电压0．4V～1．3V范围内。电荷泵上下电流失配小于1％,满足低供电电压锁相环系统对电荷泵的要求。电路采用中芯国际0．18μm标准数字工艺参数仿真。     

晶格失配对超晶格法向导热系数影响的分子动力学模拟

采用非平衡态分子动力学方法模拟了超晶格的法向导热系数随周期长度的变化关系.模拟结果表明,在晶格匹配的超晶格中,当周期长度同声子平均自由程相当时,超晶格导热系数将出现最小值.而对于具有4%晶格失配的超晶格模拟结果却表明,超晶格导热系数随周期长度的增大而单调上升.这一研究结果表明,材料的晶格失配是大多数实验研究中没有发现超晶格最小导热系数的主要原因.     

微机自适应预估控温系统

针对气体渗碳炉炉温控制对象所具有的参数时变特性和纯滞后的特点,提出了一种自适应预估补偿控制方案.文中详细介绍了系统的原理、构成、控制算法以及仿真实验结果.     

锥面包络圆柱蜗杆传动可控失配修形的研究

对锥面包络圆柱蜗杆传动（ZK蜗杆传动）进行了可控修形，分析了修形传动的基本原理。提出了通过改变蜗杆齿面接触的位置及曲率修正量来改变传动的齿面接触状态的方法，修形加工可通过改变砂轮的几何尺寸及安装参数来实现。     

光纤连接损耗的物理机理及其补偿技术的讨论

从理论上分析了光纤连接损耗的起因和物理机理，分析并讨论了目前几种新型损耗补偿技术，提高光纤材料的净纯度，使用更好的光纤器件，采用精良的制造工艺，综述了补偿光纤损耗技术的新器件，新工艺，新材料。     

最简点预测动态矩阵控制器的性能分析

定义了线性系统脉冲响应模型的相对误差和模型失配时的最小鲁棒指数，并在此基础上分析了各种拍控制器的性能，指出动态矩阵控制所能达到的性能的极限，为动态矩阵控制设计提供指导。