孔道关键氨基酸残基对电压门控钾离子通道Kv2.1和Kv2.2离子选择性的调控

哺乳动物电压门控钾离子通道在膜电位维持以及介导神经元和肌肉兴奋性方面发挥了关键性的作用,与多种神经和心血管疾病密切相关.本研究主要运用点突变方法和膜片钳技术探究W366,Y376以及W374,Y384之间的氢键对哺乳动物大鼠Kv2.1和Kv2.2通道结构和功能的影响.实验证明破坏该氢键会导致通道丧失钾离子通透能力,而主要通透钠离子.     

液体变焦透镜简介

 关于电化毛细管作用的研究始于1875年,李普曼(G.Lippmann)在当时用相关理论来解释对浸在电解液中的水银滴表面施加电压时其形状发生变化这种现象。弗洛姆金(A.Froumkine)用同样的原理解释了电解液体表面的净电荷会改变其与金属表面张角的现象,也就是所谓的电湿润过程。最近,一个巧妙的实验更加形象地展示了这种过程,从而将其应用进行了推广,并使用水银液滴对传感器和光学开关进行了测试。     

ZnS∶Zn,Pb蓝粉在低压阴极射线激发下的应用

通过对ZnS∶Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS∶Zn,Pb的性能优于ZnS∶Ag,Cl和ZnS∶Zn,可适用于FED等低压显示器。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.     

6p2阶的三度半对称图

正则图G 称为G-半对称图, 如果G 的自同构群A := AutG 有一个子群G在G 的边集上传递, 但在其点集上不传递, 特别地, 当G= A时Γ 称为半对称图. 本文旨在考察素数度的(G-)半对称图. 首先给出了素度数的(G-)半对称图的群论刻画, 其次对6p²阶的三度半对称图进行了完全分类, 其中p是奇素数.     

对电工学中几个问题的辩析

本文主要计论关于复导钠的确切定义,在任意形热闹法的互相电路中互相负载不对称时V_(0‘0)≠0,及不对称三相电路中点漂移的消除问题提出质疑。     

关于VVVF变频调整装置的性能研究

在解决变频调速装置大功率模块过电压及挢臂直通等方面进行了深入研究，提出了减小分布电感等解决方案，提高了ＶＶＶＦ（Ｖａｒｉａｂｌｅ Ｖｏｉｔａｇｅ Ｖａｒｉａｂｌｅ Ｆｒｅｑｕｅｎｃｙ）的可靠性。