Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

High index of refraction via quantum interference in a three-level system of Er^3＋-doped yttrium aluminium garnet crystal

A simple three-level system is proposed to produce high index of refraction with zero absorption in an Er^3＋-doped yttrium aluminium garnet （YAG） crystal, which is achieved for a probe field between the excited state 4I13/2 and ground state 4I15/2 by adjusting a strong coherent driving field between the upper excited state 4I11/2 and 4I15/2. It is found that the changes of the frequency of the coherent driving field and the concentration of Er^3＋ ions in the YAG crystal can maximize the index of refraction accompanied by vanishing absorption. This result could be useful for the dispersion compensation in fibre communication, laser particle acceleration, high precision magnetometry and so on.     

Inequalities for the Moments and Distribution of the Ladder Height of a Random Walk

We obtain upper bounds for the tail distribution of the first nonnegative sum of a random walk and for the moments of the overshoot over an arbitrary nonnegative level if the expectation of jumps is positive and close to zero. In addition, we find an estimate for the expectation of the first ladder epoch.     

A Symbolic Pole/Zero Extraction Methodology Based on Analysis of Circuit Time-Constants

This paper introduces a methodology for symbolic pole/zero extraction based on the formulation of the time-constant matrix of the circuits. This methodology incorporates approximation techniques specifically devoted to achieve an optimum trade-off between accuracy and complexity of the symbolic root expressions. The capability to efficiently handle even large circuits will be demonstrated through several practical circuits.     

光纤白光干涉仪等臂长技术研究

介绍了几种光纤干涉仪等臂长技术,比较了各自的优缺点和适用范围,对光纤干涉仪的平衡有较大的参考价值。     

250W带功率因数校正整流电源模块的研制

功率因数校正技术越来越成为电源行业研究的热点。文中介绍了适用于雷达等设备的250W带功率因数校正整流电源模块的设计，分析了其中升压电感器设计、主开关管保护、控制电路消振、散热设计和表面贴装等关键技术，完成了实验研究，获得了满意的试验结果。     

The Isoelectric Point and the Points of Zero Charge of Fe-Al-Mg Hydrotalcite-like Compounds

The relation of the isoelectric point (IEP) and the point of zero net charge (PZNC) of the hydrotalcite-like compounds was discussed. It was found that the IEP does not equal to the PZNC and the IEP is higher than the PZNC. The structural positive charges existing in the HTlc,which cause the difference between the IEP and the PZNC. The effects of the structural positive charges of the HTlc on its IEP and PZNC are the same as the specific adsorption of metal cations.