Yield enhancement of elliptical high harmonics driven by bicircular laser pulses

We theoretically investigate the yield enhancement of elliptical high harmonics in the interaction of molecules with bicircular laser pulses by solving the time-dependent Schrödinger equation. It is shown that by adjusting the relative intensity ratio of the two bicircular field components in specific ranges the yield of the molecular high harmonics for the plateau and cutoff regions can be respectively enhanced. To analyze this enhancement phenomenon, we calculate the weights of the electron classical trajectories. Additionally, we also study the ellipticity distribution of harmonics for different intensity ratios. We find that these enhanced harmonics are elliptically polarized, which we mainly attribute to the recombination dipole moment of the major weighted trajectories. These enhanced elliptical extreme ultraviolet and soft x-ray radiations may serve as essential tools for exploring the ultrafast dynamics in magnetic materials and chiral media.     

30.4 nm光电成像系统分辨率的初步实验研究

本文基于微通道板MCP(Microchannel Plate)探测器件设计一套成像系统，用于对波长为30．4nm的极紫外EUV(Extreme Ultraviolet)光进行成像．结果获得了一宽度为3mm的狭缝的像，实验测得490μm的成像系统的空间分辨率，并分析了影响系统分辨率的各种因素及为提高系统分辨率所应采取的措施．     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

CuPc molecules adsorbed on Au(1 1 0)-(1 × 2): growth morphology and evolution of valence band states

We present the growth morphology, the long-range ordering, and the evolution of the valence band electronic states of ultrathin films of copper phthalocyanine (CuPc) deposited on the Au(1 1 0)-(1 × 2) reconstructed surface, as a function of the organic molecule coverage. The low energy electron diffraction patterns present a (5 × 3) reconstruction from the early adsorption stages. High-resolution UV photoelectron spectroscopy data show the disappearance of the Au surface states related to the (1 × 2) reconstruction, and the presence of new electronic features related to the molecule-substrate interaction and to the CuPc molecular states. The CuPc highest occupied molecular orbital gradually emerges in the valence band, while the interface electronic states are quenched, upon increasing the coverage.     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

Optical design of a toroidal grating monochromator based beam line on Indus-1

In this paper, we discuss the detailed optical design of a beam line that is under construction on the synchrotron radiation source, Indus-1. Toroidal mirrors are used as pre-and post- focusing elements and a toroidal grating monochromator as a dispersing element. Using three interchangeable gratings, this monochromator will give, at a moderate resolution, a good throughput on the sample in the wavelength range 40 to 1000 Å. Effect of various parameters and their optimization on the resolution and throughput characteristics have been studied by ray tracing calculations, and presented.     

Eu^2＋：BaFCl光激励发光过程中紫外线的激发与漂白效应

通过改变紫外线的辐射照能量范围，研究了Ｅｕ＾２＋：ＢａＦＣｌ的光激励发光性质。发现紫外线能量大于Ｅｕ＾２＋的最低激发态能量及紫外线的能量小于Ｅｕ＾２＋最低激发态的能量两种情况下，光激励发光具有明显的差异，分析了产生差异的原因，给出了紫外线的辐照能量发生转时所对应的能级位置。     

紫外分光光度法测定甲砜霉素片的含量

根据甲砜霉素的紫外吸收特征,建立了以乙腈-水为溶媒、(225±1)nm为最大吸收波长的紫外分光光度法。方法的线性范围为0.5～25.0μg/mL,平均回收率为99.92％,RSD为0.30％。用对照品比较法测定5批甲砜霉素片的含量,并与中国药典方法的测定结果进行比对,结果表明,两种方法的测定结果基本一致。     

紫外分光光度法测定蔬菜鲜样中的硝酸盐

建立了紫外分光光度法测定蔬菜鲜样中硝酸盐含量的方法，经t检验证明，该方法的测定结果与酚二磺酸法无显著性差异，RSD小于4．5％，方法操作简便，适用于蔬菜中硝酸盐含量的测定。     

不同形态阴离子的高效毛细管电泳的间接紫外检测

本文研究了用毛细管电泳紫外间接检测法对几种阴离子不同形态进行分析。