The rotational anisotropies in the ferromagnetism/antiferromagnetism 1/ antiferromagnetism 2 exchange bias structures

The rotational anisotropies in the exchange bias structures of ferromagnetism/antiferromagnetism 1/antiferromagnetism 2 are studied in this paper. Based on the model, in which the antiferromagnetism is treated with an Ising mean field theory and the rotational anisotropy is assumed to be related to the field created by the moment induced on the antiferromagnetic layer next to the ferromagnetic layer, we can explain why in experiments for ferromagnetism (FM)/antiferromagntism 1 (AFM1)/antiferromagnetism 2 (AFM2) systems the thickness-dependent rotational anisotropy value is non-monotonic, i.e. it reaches a minimum for this system at a specific thickness of the first antiferromagnetic layer and exhibits oscillatory behaviour. In addition, we find that the temperature-dependent rotational anisotropy value is in good agreement with the experimental result.     

限制在疏水板中的新的六边形-四边形三层冰结构

对限制在两个光滑的疏水板间的水进行了分子动力学模拟,观察到了两种晶体结构,都满足冰规则．在1GPa的压强和1．0nm的板间距下获得的新的冰相是平坦的六边形-四边形三层冰．在此结构中,靠近板的两层（外层）中的水分子形成六边形环,中间层的水分子形成四边形环．对于外层的水分子,其四个氢键中的三个在同一层中,另一个氢键与中间层连接．对于中间层的水分子,四个氢键中的两个在同。层中,而另外两个氢键与两个不同的外层相连．虽然三层的形状不同,但其面密度却接近相等．另一种结构是在0．8nm的板问距和100MPa的侧向压下获得的平坦的六边形双层冰．模拟中的相变既有一阶相变,也有连续相变．     

Fabrication of rhenium Josephson junctions

Rhenium is a superconductor with a relatively weak tendency to oxidize, which is advantageous in superconducting quantum circuit and qubit applications. In this work, Re/A1-A1Ox/Re Josephson tunnel junctions were fabricated using a selective film-etching process similar to that developed in Nb trilayer technology. The Re films had a superconducting transition temperature of 4.8 K and a transition width of 0.2 K. The junctions were found to be highly reproducible using the fabrication process and their characteristics had good quality with a low leakage current and showed a superconducting gap of 0.55 meV.     

曲折形三层等宽FeCuNbSiB/Cu/FeCuNbSiB多层膜巨磁阻抗效应研究

采用磁控溅射方法,在玻璃基片上制备了曲折形三层等宽FeCuNbSiB/Cu/FeCuNbSiB多层膜。在1~40MHz下,研究了多层膜材料的巨磁阻抗(GMI)效应随外加磁场的变化关系。结果表明:在频率为5MHz、磁场强度为12kA/m下,横向和纵向GMI效应分别达–23.5%和–16.8%。薄膜材料的纵向、横向GMI效应随外加磁场变化呈现先增后降,而纵向表现尤为明显。     

电镀前工艺对MLCC电镀后质量的影响

在相同电镀条件下，对不同银端浆、不同材料体系的ＭＬＣＣ进行电镀，实验结果表明，它们的镀后合格率不一样。总的来讲，１类瓷的镀后合格率要高于２类瓷的合格率，高温烧结的ＭＬＣＣ的镀后合格率要高于低温烧结的ＭＬＣＣ。端电极银底层的质量对于镀后ＭＬＣＣ的产品合格率有很大的影响，用扫描电镜观察发现如果银底层不致密或有针孔，将导致镀后ＭＬＣＣ的损耗超出合格标准。     

限制在疏水板中的新的六边形-四边形三层冰结构 (cited: 1)

对限制在两个光滑的疏水板间的水进行了分子动力学模拟,观察到了两种晶体结构,都满足冰规则. 在1 GPa的压强和1.0 nm的板间距下获得的新的冰相是平坦的六边形-四边形三层冰. 在此结构中,靠近板的两层(外层)中的水分子形成六边形环,中间层的水分子形成四边形环. 对于外层的水分子,其四个氢键中的三个在同一层中,另一个氢键与中间层连接. 对于中间层的水分子,四个氢键中的两个在同一层中,而另外两个氢键与两个不同的外层相连. 虽然三层的形状不同,但其面密度却接近相等. 另一种结构是在0.8 nm的板间距和100     

Influence of Ag thickness on the structural,optical, and electrical properties of the SnS/Ag/SnS trilayer films for solar cell application

We fabricated the SnS/Ag/SnS (SAS) trilayer thin films by a sputtering method at 200 $°C$. The structural, optical, and electrical properties of the films were studied by varying the Ag interlayer thickness from 9 to 27 nm. The EDS analysis revealed that all SAS trilayer films showed an increase in the atomic percentage of Ag from 1.87 to 6.18. The X-ray diffraction studies confirmed that SAS films with Ag-18 nm thickness showed a preferred (111) peak of the SnS with improved crystallinity. The optical absorption coefficient of the SAS films increased by a factor of 18 when compared to the SnS films without Ag. Also, the optical band gap decreased from 1.53 to 1.28 eV with Ag thickness. All SAS films exhibited the p-type conductivity with increased hole-concentration from 1.94 $\times$ ${10}^{14}$ to 4.15 $\times$${10}^{18}$cm⁻³ and also the mobility from 1.31 to 81.6 cm². V⁻¹s⁻¹.     

Light-induced unconventional Landau levels of ultracold fermions in a trilayer honeycomb lattice

The spectrum of cold fermionic atoms is studied in a trilayer honeycomb optical lattice subjected to a perpendicular effective magnetic field,which is created with optical means. In the low energy approximation,the spectrum shows unconventional Landau levels,which are proportional to the 3/2 power of integer numbers. The zoro modes exist and the quasiparticles are chiral. It is also proposed to identify the unconventional Landau levels via probing the dynamic structure factor of the system with Bragg spectr...     

Control of the preferred orientations of Cu(In,Ga)Se2 films and the photovoltaic conversion efficiency using a surface‐functionalized molybdenum back contact

The surface microstructures of molybdenum (Mo) back contacts were shown to play a crucial role in the preferred orientations of Cu(In,Ga)Se₂ (CIGS) films. The lower surface density of Mo tends to drive the growth of CIGS films toward favoring a (220)/(204) orientation, attributed to the higher likelihood of a MoSe₂ reaction. This work showed that the presence of a very thin layer on a Mo bilayer facilitated the tuning of the CIGS grain orientations from strongly favoring (112) to strongly favoring (220)/(204) without sacrificing the electrode conductivity. The efficiency of Na‐doped CIGS cells was increased toward decreasing Mo surface density, that is, increasing (220)/(204) CIGS orientation. Although slight changes in Na doping found between different Mo surface properties could contribute in part, the comparison with Na‐reduced CIGS cells showed that it was more likely due to the (220)/(204) orientation‐related enhancement of CdS/CIGS junction characteristics, which were possibly attributed to a favorable CdS reaction and a reduction in the defect metastabilities. Copyright © 2012 John Wiley & Sons, Ltd.     

电镀工艺对多层瓷介电容器介电性能的影响

用滚镀和静态电镀的实验方法研究了电镀过程对多层瓷介电容器（ＭＬＣＣ）的介电性能的影响。镀镍后，ＭＬＣＣ的电容量略有提高，损耗和温度系数几乎没有变化。镀锡后，ＭＬＣＣ的电容量下降幅度较大，损耗增大，并且随着温度的升高而迅速增加，从而导致电容量变大，进而使电容量温度系数增大。并且高温损耗随着测试频率的提高而降低。将ＭＬＣＣ置于正在电镀的镀镍液和镀锡液中浸泡，发现镀锡液较镀镍液对ＭＬＣＣ有更强的渗入能力和侵蚀能力。