Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices

NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies–charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.     

Experimental progress in optical manipulation of single atoms for cavity QED

Cavity QED, as a fundamental system and research field, not only illuminates the primary aspects of decoherence and coherence in quantum dynamics, but also advances quantum information science. Manipulation of single atoms, in the context of cavity QED, is the essential element and has been becoming a hot issue for the past two decades. In this review paper, we will concentrate on the experimental aspects for manipulating the neutral atoms strongly coupled to a high-finesse cavity in the optical regime, including atomic cooling and trapping, different configurations of atom transportation and the wide variety of quantum outgrowths based on cavity QED, such as one atom laser, single photon source, etc. The cavity QED system at Shanxi University is briefly introduced.      

Optimization of spin-valve parameters for magnetic bead trapping and manipulation

Magneto-optic Kerr effect (MOKE) and magnetoresistance (MR) measurements were used to measure the switching characteristics of spin-valve (SV) arrays currently being developed to trap and release superparamagnetic beads within a fluid medium. The effect of SV size on switching observed by MOKE showed that a 1 μm×8 μm SV element was found to have optimal switching characteristics. MR measurements on a single 1 μm×8 μm SV switched with either an external applied magnetic field or a local magnetic field generated by an integrated write wire (current density ranging from 10⁶ to 10⁷ A/cm²) confirmed the MOKE findings. The 1 μm×8 μm SV low field switching was observed to be +8 and −2 mT with two stable states at zero field; the high field switching was observed to be −18 mT. The low switching fields and the large magnetic moment of the SV trap along with our observation of minimal magnetostatic effects for dense arrays are necessary design characteristics for high-force, “switchable-magnet,” microfluidic bead trap applications.     

Avoiding trap states in poly(n-vinylcarbazole) thin films

Optical properties of poly(n-vinylcarbazole) (PVK) thin films are revisited. Steady-state emission spectra put in evidence a strong red band whose intensity increases with decreasing temperature when the solid state PVK film is excited by a continuous 375 nm laser line. This red band is assigned to the emission from PVK aggregate states which act as trap states for the monomeric PVK triplet high energy (blue) excitons. At the same low temperatures, these trap states can be avoided when the excitation of the PVK film is made by a 355 nm pulsed laser line with 10 Hz repetition rate. The red band was also observed to compete with the emission of guest poly(3-octadecylthiophene) (PODT) molecules in a PVK/PODT sequential bilayer structure. Different optical geometries enabled us to show that the exciton energy transfer effect from PVK donor to PODT acceptor states dominates the scenario in the bilayer structure, suppressing almost completely the trap state emissions.     

Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric

Metal-oxide-semiconductor (MOS) devices, using a Si substrate and a thermal SiON film as the gate dielectric on a Ge layer, have been physically and electrically characterized. The small frequency dispersion and negligible hysteresis demonstrate very few oxide traps. The efficiency of Ge surface passivation is evidenced by the acceptable interface trap density of 7.08 × 10¹¹ cm⁻² eV⁻¹ close to midgap, which is critical for the enhancement of the carrier mobility in MOSFET devices. On the other hand, for the thermal SiON film, a higher permittivity of 4.86 can be achieved by NH₃ nitridation and a subsequent N₂O treatment of an as-grown SiO₂ film without compromising its leakage current. The conduction mechanism is confirmed to be Fowler-Nordheim (F-N) tunneling with extracted electron barrier height of 2.71 eV. Combining with these promising properties, the SiON film shows a great potential to further boost the performance of Ge MOSFETs. Most importantly, without using a Ge substrate, the SiON film on a Ge layer can be formed by the process fully compatible with incumbent ultra-large-scale integration (ULSI) technology, and hence, providing an economic way of fabricating high-performance Ge MOSFETs.     

Coherent population trapping states with cold atoms in a magnetic field

Using potassium atoms cooled with a MOT, ground-state hyperfine coherent population trapped (CPT) states were prepared in a magnetic (B) field, and the behavior of CPT states was experimentally studied. We carefully measured the preparation of the CPT state as a function of time and the CPT signal as a function of laser power. The experimental CPT signal linewidth was approximately proportional to the square root of laser intensity in the range of parameters studied, and limits of this relation were explored theoretically.     

Enhancement of Axial Trapping Force in a Single-beam Gradient Optical Trap by a Pair of Axicons

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Accurate Q value for the Se double-electron-capture decay

The Q   value of the neutrinoless double-electron-capture (0νECEC$0\nu \text{ECEC}$) decay of ⁷⁴Se was measured by using the JYFLTRAP Penning trap. The determined value is 1209.169(49) keV, which practically excludes the possibility of a complete energy degeneracy with the second ²⁺$2^{+}$ state (1204.205(7) keV) of ⁷⁴Ge in a resonant 0νECEC$0\nu \text{ECEC}$ decay. We have also computed the associated nuclear matrix element by using a microscopic nuclear model with realistic two-nucleon interactions. The computed matrix element is found to be quite small. The failure of the resonant condition, combined with the small nuclear matrix element and needed p-wave capture, suppresses the decay rate strongly and thus excludes ⁷⁴Se as a possible candidate to search for resonant 0νECEC$0\nu \text{ECEC}$ processes.     

浅析陷阱和复合中心与能级位置的关系

利用单一能级复合中心理论,分析了杂质和缺陷作为陷阱和复合中心与能级位置的依赖关系。     

Sampling and analysis of volatile organic compounds in air using a dualsorbent trap

Summary A dualsorbent trap containing graphitized carbon blacks was used for the collection of volatile and semi-volatile organic pollutants from the atmosphere of different workplaces and from an above-ground parking lot. The method proved to be sensitive, simple and reliable. Thermal desorption and solvent extraction methods followed by GC-MS analysis were employed.