轴流风扇叶片端导叶作用的研究

本文采用数值方法研究了叶片端导叶对轴流风扇性能的影响。通过与普通开式轴流风扇比较,分析了叶片端导叶对内部流动作用的机理.数值计算结果表明:叶片端导叶的安装位置将影响轴流风扇气动效率,安装叶片端导叶不能提高风扇静压升,但是在压力面安装时能有效地减小风扇叶顶泄漏流与主流的掺混损失;在设计流量下,压力面安装叶片端导叶使泄漏涡的作用范围较小,涡核更靠近吸力面;吸力面安装叶片端导叶弱化了泄漏涡的强度但没有减小泄漏涡的作用范围。     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

WCDMA系统中SPT数字滤波器的一种设计方法

相对于传统的数字滤波器实现方法,符号的2次幂和(SPT)滤波器用移位寄存器替代乘法器,因而资源消耗少、速度快,更加适于专用集成电路(ASIC)设计.介绍了一种适用于宽带码分多址(WCDMA)前向信道中给定基带成形滤波器单位脉冲响应后设计SPT滤波器的方法.相对于传统的理想SPT系数优化方法,此方法更适于给定单位脉冲响应后SPT滤波器的设计,计算复杂度低;仿真结果显示,相对于更加简单的四舍五入方法,此算法在性能上又有可观的增益.     

单片机在超声测距系统中的一种应用

为提高人们在测量距离时的方便性和准确性,现介绍一种基于单片机控制的超声测距系统的构成、工作原理和硬软件设计,利用该系统及其设计方法可以作为机器人的辅助视觉系统,也可用于其他的检测系统中.     

In Situ Polymerizing Internal Encapsulation Strategy Enables Stable Perovskite Solar Cells toward Lead Leakage Suppression

Despite the outstanding power conversion efficiency (PCE) of perovskite solar cells (PSCs) achieved over the years, unsatisfactory stability and lead toxicity remain obstacles that limit their competitiveness and large-scale practical deployment. In this study, in situ polymerizing internal encapsulation (IPIE) is developed as a holistic approach to overcome these challenges. The uniform polymer internal package layer constructed by thermally triggered cross-linkable monomers not only solidifies the ionic perovskite crystalline by strong electron-withdrawing/donating chemical sites, but also acts as a water penetration and ion migration barrier to prolong shelf life under harsh environments. The optimized MAPbI₃ and FAPbI₃ devices with IPIE treatment yield impressive efficiencies of 22.29% and 24.12%, respectively, accompanied by remarkably enhanced environmental and mechanical stabilities. In addition, toxic water-soluble lead leakage is minimized by the synergetic effect of the physical encapsulation wall and chemical chelation conferred by the IPIE. Hence, this strategy provides a feasible route for preparing efficient, stable, and eco-friendly PSCs.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

基于小波变换的在役管线漏磁信号的去噪

采用漏磁法对在役管线进行无损检测时,所采集的信号中含有大量的噪声需要去除。文中介绍了小波变换的基本理论及检测信号和噪声信号在小波变换下的特性,说明了去除漏磁信号噪声的原理。在仿真试验中采用二阶双正交样条小波为小波函数,选用软硬阈值折中法和自适应阈值处理小波系数,结果表明将小波变换应用于在役管线漏磁检测中,能很好地去除噪声,提取出有用信号。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

Te溶剂Bridgman法CdMnTe晶体核辐射探测器的制备和表征

碲锰镉(CdMnTe)作为性能优异的室温核辐射探测器材料,可用于环境监测和工业无损检测领域。本文中采用Te溶剂Bridgman法生长In掺杂Cd_0.9Mn_0.1Te晶体,制备成10 mm×10 mm×2 mm大小的室温单平面探测器,研究了该探测器对²⁴¹Am@59.5 keV γ射线源的能谱响应。通过表征红外透过率、电阻率以及探测器能谱响应等参数,综合评定了探测器用CdMnTe晶体的质量、电学和探测器性能。结果表明,晶片的红外透过率均在55%以上,最好可达到60%。采用湿法钝化,100 V偏压下的漏电流由钝化前的9.48 nA降为钝化后的7.90 nA,钝化后的电阻率为2.832×10¹⁰ Ω·cm。在-400 V反向偏压下,CdMnTe探测器对²⁴¹Am@59.5 keV γ射线源的能量分辨率在钝化前后分别为13.53%和12.51%,钝化后的电子迁移率寿命积为1.049×10^-3 cm²/V。研究了探测器的能量分辨率随电压的变化特性,当偏压≤400 V时,探测器的能量分辨率主要由载流子的收集效率决定,而当偏压>400 V时,能量分辨率由漏电流决定。本文研究结果表明,Te溶剂Bridgman法生长的CdMnTe晶体质量较好,电阻率和电子迁移率寿命积满足探测器制备需求。