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Etching was performed on(100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant.Experiments were carried out in different TMAH concentrations at different temperatures for different etching times.The surface phenomena,etching rates,surface morphology and surface reflectance were analyzed.Experimental results show that the resulting surface covered with uniform pyramids can be realized with a small change in etching rates during the et... 相似文献
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