THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

连续波半主动雷达制导空空导弹截获跟踪距离计算

分析了连续波半主动雷达制导导弹导引头工作电磁环境和对武器系统攻击区的影响，建立了热噪声和杂波干扰环境下导引头截获距离方程，分析推导了直波泄漏干扰，地杂波干扰的计算公式，并在此基础上给出了导弹允许攻击区计算公式。     

Flash器件中氧化硅/氮化硅/氧化硅的特性

对普遍采用的氧化硅/氮化硅/氧化硅( ONO)三层复合结构介质层的制备工艺及特性进行了研究分析,研究了ONO的漏电特性以及顶氧( top oxide)和底氧( bottom oxide)的厚度对ONO层漏电的影响.结果表明,采用较薄的底氧和较厚的顶氧,既能保证较高的临界电场强度,又能获得较薄的等效氧化层厚度,提高耦合率,降低编程电压.     

轴流风扇叶片端导叶作用的研究

本文采用数值方法研究了叶片端导叶对轴流风扇性能的影响。通过与普通开式轴流风扇比较,分析了叶片端导叶对内部流动作用的机理.数值计算结果表明:叶片端导叶的安装位置将影响轴流风扇气动效率,安装叶片端导叶不能提高风扇静压升,但是在压力面安装时能有效地减小风扇叶顶泄漏流与主流的掺混损失;在设计流量下,压力面安装叶片端导叶使泄漏涡的作用范围较小,涡核更靠近吸力面;吸力面安装叶片端导叶弱化了泄漏涡的强度但没有减小泄漏涡的作用范围。     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

}MSo浸种对大麦种子萌发及若干性状的影响

本文报道二甲亚矾(DMSO)浸种影响大麦“早熟3号”种子的萌发以及浸种后种子的渗漏和呼吸强度等的变化.结果表明:在24℃条件干浸种，。.1%和5芳的DMSO明显促进种子的萌发，5劣DMSO浸种的促进作用尤为明显.然而这种影响效应在zs c条件下浸种则完全相反，对种子萌发有抑制作用，表现明显的温度效应.     

某轴流压气机叶尖间隙效应实验研究

本文对某低速轴流压气机叶尖间隙尺度对性能的影响进行了实验研究,并通过不同的机匣结构情况研究一种叶尖漏流不敏感机匣。实验表明,不同的间隙尺度对叶轮机总体性能存在十分明显的影响。对绝大部分运行状态,小间隙下的压升和效率均明显高于大间隙的情况。另外,所采用的毛刷式和篦齿式的机匣实验结果表明,不论毛刷式还是篦齿式机匣,在大流量负攻角情况下对性能的影响不大,但毛刷式机匣并不能达到提高失速裕度的目的,而篦齿式机匣在小流量情况下对压升有所提高,但对效率影响不大。     

In Situ Polymerizing Internal Encapsulation Strategy Enables Stable Perovskite Solar Cells toward Lead Leakage Suppression

Despite the outstanding power conversion efficiency (PCE) of perovskite solar cells (PSCs) achieved over the years, unsatisfactory stability and lead toxicity remain obstacles that limit their competitiveness and large-scale practical deployment. In this study, in situ polymerizing internal encapsulation (IPIE) is developed as a holistic approach to overcome these challenges. The uniform polymer internal package layer constructed by thermally triggered cross-linkable monomers not only solidifies the ionic perovskite crystalline by strong electron-withdrawing/donating chemical sites, but also acts as a water penetration and ion migration barrier to prolong shelf life under harsh environments. The optimized MAPbI₃ and FAPbI₃ devices with IPIE treatment yield impressive efficiencies of 22.29% and 24.12%, respectively, accompanied by remarkably enhanced environmental and mechanical stabilities. In addition, toxic water-soluble lead leakage is minimized by the synergetic effect of the physical encapsulation wall and chemical chelation conferred by the IPIE. Hence, this strategy provides a feasible route for preparing efficient, stable, and eco-friendly PSCs.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

基于小波变换的在役管线漏磁信号的去噪

采用漏磁法对在役管线进行无损检测时,所采集的信号中含有大量的噪声需要去除。文中介绍了小波变换的基本理论及检测信号和噪声信号在小波变换下的特性,说明了去除漏磁信号噪声的原理。在仿真试验中采用二阶双正交样条小波为小波函数,选用软硬阈值折中法和自适应阈值处理小波系数,结果表明将小波变换应用于在役管线漏磁检测中,能很好地去除噪声,提取出有用信号。