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1.
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.  相似文献   
2.
MCM用氮化铝共烧多层陶瓷基板的研究   总被引:1,自引:1,他引:0  
通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。  相似文献   
3.
The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural results are presented.  相似文献   
4.
Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature.  相似文献   
5.
Defects were characterized in epitaxial (001) CeO2 films deposited and planarizedin situ on patterned (001) LaAlO3 substrates by ion beam assisted deposition (IBAD). A hill and valley structure with steps running parallel to the [100] LaAlO3 axis was produced on the surface of the substrate by photolithography and ion beam etching prior to film deposition. A conformai epitaxial CeO2 layer of ∼ 100 nm thickness was deposited on the heated substrate by e-beam evaporation. Lattice-matching between the e-beam film and the substrate was of the type: (001) CeO2∥(001) LaAlO3 and [110] CeO2∥[100] LaAlO3. Evaporative deposition of additional film onto the conformai layer was accompanied by bombardment with a 500 eV argon/oxygen ion beam to promotein situ planarization. Extreme lattice misfit for the orientation (001) CeO2∥(001)LaAlO3 and [001] CeO2∥[001] LaAlO3 caused formation of dislocations in the e-beam CeO2 film in the vicinity of individual ledges in the substrate surface. Coherence of the CeO2 film was locally lost in the step regions of the hill and valley structure. The large patterned steps, which are composed of numerous adjacent ledges in the LaAlO3 surface, caused nucleation of CeO2 with a tilt misalignment of up to ∼5‡ about the substrate [100]. Nucleation and growth of nonepitaxial CeO2 crystallites was observed along the step regions of the film during the IBAD portion of deposition. Defect formation in the e-beam ceria layer due to substrate surface relief indicates that “lattice engineering≓ of multilayer epitaxial structures may not be possible when nonplanar surfaces are created during device fabrication. The IBAD CeO2 layer was more defective than the conformai layer deposited without the impinging ion beam, even in the portions of the film where epitaxy was maintained throughout both layers.  相似文献   
6.
We have grown Ge x Si1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge0.19Si0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge0.14Si0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.  相似文献   
7.
In this paper Al, Zn and Al–43.4Zn–1.6Si (AlZn) alloy‐coated steel have been treated with the organofunctional silane γ‐mercaptopropyltrimethoxysilane (γ‐MPS). The influence of different metal substrates on the structure and composition of the silane films was investigated with XPS and AES. The films were obtained by dipping the substrates in the silane solution followed by a blow‐dry procedure in nitrogen gas. The results show that the surface concentration of the deposited silane is independent of the metal substrate and that the thickness of the silane film is non‐uniform. The AES measurements indicate that the silane film covers the entire substrate surface and XPS analysis of the silane‐treated substrate surfaces at different take‐off angles indicates that the γ‐MPS molecule is randomly orientated. Also, the results show that the silane is well hydrolysed under the solution conditions used. Finally, in the zinc‐containing silane‐metal systems, i.e. the silane‐treated AlZn and Zn substrates, the results indicate that the γ‐MPS molecules can bond to the substrate surfaces via the thiol group of the molecule. Copyright © 2004 John Wiley & Sons, Ltd.  相似文献   
8.
The results of an experimental study of the acid hydrolysis of hardwood are presented in the form of values for the three parameters, activation energy, power on the acid concentration, and pre-exponen-tial factor, of the first order kinetic constants for each of the following reaction participants: xylan remaining, glucan remaining, xylose formed, and xylose decomposed. These are used as a base for a quantitative theory to predict the temperature, time, and acid concentrations needed for effective pretreatment of the substrate for subsequent enzymatic hydrolysis of the glucan. This theory is based on the assumption that successful pretreatment requires >90% removal of the xylan, <10% removal of the glucan, and >80% xylose yield. This theory is compared with selected published data.  相似文献   
9.
An efficient hybrid field solution to the general multilayer substrates transmission line problems with full shielded and half open cross-sectional geometry is presented by using the waveguide modes coupling and decoupling procedure in the spectral domain. Modal transverse transmission lines corresponding to the LSE and LSM modes are taken into account so that the Green's elements for the edge conditions can be derived by a simple iterative method. In this paper, we analyze not only the propagation constants and characteristic impedances but also the available transmission power capacity and power distribution of most commonly used structures. Normalized eigenmode power levels characterizing the propagation features are computed.  相似文献   
10.
A visible light promoted, photoredox catalysed, green one-pot approach for the alkylation of amine substrates with sp2 carbon has been developed. This eosin Y based organic transformations, can behave as an effective direct hydrogen-atom transfer catalyst for coupling reaction. The proposed strategy includes simple procedure which can make adduct product with sp2 carbon. This eosin Y based photocatalytic hydrogen-atom transfer strategy may hold great potential for diverse functionalization of a wide range of native CH bonds in an economical and sustainable manner.  相似文献   
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