Studies on metabolites and metabolic pathways of bulleyaconitine A in rat liver microsomes using LC‐MSn combined with specific inhibitors

Bulleyaconitine A (BLA) from Aconitum bulleyanum plants is usually used as anti‐inflammatory drug in some Asian countries. It has a variety of bioactivities, and at the same time some toxicities. Since the bioactivities and toxicities of BLA are closely related to its metabolism, the metabolites and the metabolic pathways of BLA in rat liver microsomes were investigated by HPLC–MSⁿ. In this research, the 12 metabolites of BLA were identified according to the results of HPLC‐MSⁿ data and the relevant literature. The results showed that there are multiple metabolites of BLA in rat liver microsomes, including demethylation, deacetylation, dehydrogenation deacetylation and hydroxylation. The major metabolic pathways of BLA in rat liver microsomes were clarified by HPLC‐MS combined with specific inhibitors of CYP450 isoforms. As a result, CYP3A and 2C were found to be the principal CYP isoforms contributing to the metabolism of BLA. Moreover, CYP2D6 and 2E1 are also more important CYP isoforms for the metabolism of BLA. While CYP1A2 only affected the formation rate of M11, its effect on the metabolism of BLA is very small. Copyright © 2014 John Wiley & Sons, Ltd.     

Specific emitter identification for satellite communication using probabilistic neural networks

Electromagnetic signal emitted by satellite communication (satcom) transmitters are used to identify specific individual uplink satcom terminals sharing the common transponder in real environment, which is known as specific emitter identification (SEI) that allows for early indications and warning (I&W) of the targets carrying satcom furnishment and furthermore the real time electromagnetic situation awareness in military operations. In this paper, the authors are the first to propose the identification of specific transmitters of satcom by using probabilistic neural networks (PNN) to reach the goal of target recognition. We have been devoted to the examination by exploring the feasibility of utilizing the Hilbert transform to signal preprocessing, applying the discrete wavelet transform to feature extraction, and employing the PNN to perform the classification of stationary signals. There are a total of 1000 sampling time series with binary phase shift keying (BPSK) modulation originated by five types of satcom transmitters in the test. The established PNNs classifier implements the data testing and finally yields satisfactory accuracy at 8 dB(±1 dB) carrier to noise ratio, which indicates the feasibility of our method, and even the keen insight of its application in military.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

一类潜热型功能液固两相流体的定压比热研究

应用两相流与热物理理论，严格推导出一类潜热型功能液固两相流体的定压比热计算公式．     

数字电视传输流的实时码率变换系统

数字视频压缩后通常是打包成传输流的形式进行传送，年个传输流有其固定的发送码率，在某些应用场合，比如信道调制前端，需要对输入传输流码率进行改变以适应该信道要求，描述了一种全硬件实现，双路输出，实时，节目可选择的码率变换系统的原理及具体实现。     

组织合作中关系专用性投资最优水平分析

本在以往研究的基础上对关系专用投资的价值创造功能作了进一步的讨论，分析了其创造准租金收入的机理和一般表示，在此基础上结合以往交易成本经济学对关系专用性投资的认识以及其作为沉没成本的特征，从效用最大化的角度建立了两个成员的联盟中关系专用性投资的决策模型，分析了关系专用性投资创造准租的具体特征对投资水平的影响。     

数码相机CMOS图像传感器的特性参数与选择

介绍了数码相机的核心器件———CMOS图像传感器的特性参数和在数码相机设计过程中CMOS图像传感器的选择。选择CMOS图像传感器,不仅需要考虑包括传感器的尺寸、像素总数和有效像素数、最小照度、动态范围、灵敏度、分辨力、光电响应不均匀性以及光谱响应等在内的特性参数,而且还要考虑电源管理和功耗、模数转换位数、开发的简便性以及成本等因素。     

Kinetic Studies on the Reaction of Sodium Hexa-cyanoferrate(II) Complex with Peroxydisulfate Anion

Introduction In the previous studies on the oxidation reaction,peroxydisulfate was widely used as an oxidizingagent.1-5 One of the advantages of this oxidant lies in itsstability in a wide range of pH values. The reaction be-tween Fe(CN)5L3- (L=N-aromatic heterocyclic li-gands) and S2O8 2- has been proved to proceed throughan outer-sphere electron transfer mechanism.5 For a re-action [(Eq. (1)] to be under an outer-sphere mechanismthe steps involved are the formation of a reactant …     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

低压铝箔交流腐蚀研究

在３０Ｈｚ频率下，通过铝箔在ＨＣｌ＋Ｈ２ＳＯ４＋ＨＮＯ３＋Ｈ３ＰＯ４体系中的交流腐蚀，研究腐蚀液组成中腐蚀主体及缓蚀剂对铝箔腐蚀的作用，探讨腐蚀过程中电源频率、腐蚀液温度、电流密度及腐蚀时间对铝箔腐蚀的影响。腐蚀液组成的配比恰当，有利于比容的提高。在特定的频率下采用合适的腐蚀液温度、适宜的电流密度和腐蚀时间可以提高铝箔的静电容量。