Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

新型毫米波微带带通滤波器

介绍了一种新型的加载电容型毫米波微带带通滤波器。对这种滤波器进行了分析,推导出了滤波器中所用谐振单元间的耦合系数。该滤波器通过加载电容而出现慢波效应,使得在不改变电路性能的情况下,减小了电路尺寸。同时由于电路中加载电容形成的慢波效应而出现了带阻效应,因此对谐波有很好的抑制作用。利用高频分析软件CST仿真分析并设计了这种新型的加载电容型毫米波微带带通滤波器,实验结果与设计曲线结果相符。     

基于充放电原理实现的微电容测量电路

具有抗分布电容以及简单实用等特性的充放电电路是目前微电容测量中广泛采用的一种测量电路。本文对基于充放电原理的微电容测量电路进行了深入研究，并介绍一种基于充放电原理的实用电路。     

Projective geometry and special relativity

Some concepts of real and complex projective geometry are applied to the fundamental physical notions that relate to Minkowski space and the Lorentz group. In particular, it is shown that the transition from an infinite speed of propagation for light waves to a finite one entails the replacement of a hyperplane at infinity with a light cone and the replacement of an affine hyperplane – or rest space – with a proper time hyperboloid. The transition from the metric theory of electromagnetism to the pre‐metric theory is discussed in the context of complex projective geometry, and ultimately, it is proposed that the geometrical issues are more general than electromagnetism, namely, they pertain to the transition from point mechanics to wave mechanics.     

Hydrophobicity-induced drying transition in alkanethiol self-assembled monolayer—water interface

During the course of our investigation of the electron transfer properties of some redox species through highly hydrophobic long chain alkanethiol molecules on gold in aqueous and non-aqueous solvents, we obtained some intriguing results such as unusually low interfacial capacitance, very high values of impedance and film resistance, all of which pointed to the possible existence of a nanometer size interfacial gap between the hydrophobic monolayer and aqueous electrolyte. We explain this phenomenon by a model for the alkanethiol monolayer—aqueous electrolyte interface, in which the extremely hydrophobic alkanethiol film repels water molecules adjacent to it and in the process creates a shield between the monolayer film and water. This effectively increases the overall thickness of the dielectric layer that is manifested as an abnormally low value of interfacial capacitance. This behaviour is very much akin to the ‘drying transition’ proposed by Lum, Chandler and Weeks in their theory of length scale dependent hydrophobicity. For small hydrophobic units consisting of apolar solutes, the water molecules can reorganize around them without sacrificing their hydrogen bonds. Since for an extended hydrophobic unit, the existence of hydrogen bonded water structure close to it is geometrically unfavourable, there is a net depletion of water molecules in the vicinity leading to the possible creation of a hydrophobic interfacial gap.     

电容传感器在使用中存在的几个问题及处理方法

随着电容测量技术的迅速发展，电容传感器在非电量测量和自动检测中得到广泛应用，但它在使用过程中也存在一些问题，针对在使用电容传感器过程中存在的几个问题，从电容传感器的原理和工作过程两个方面进行了讨论，并提出行之有效的处理方法。     

论恒力作用下质点的相对论运动

在相对论情况下，讨论了受恒力作用的质点的运动规律。     

Kirchhoff方程的相对常值特解及其Lyapunov稳定性

对于超细长弹性杆静力学的Kirchhoff方程，用动力学的概念和方法研究其常值特解 和稳定性问题.计算了Kirchhoff方程相对固定坐标系、截面主轴坐标系以及中心线Frenet 坐标系的常值特解，进行了Kirchhoff动力学比拟，用一次近似理论分别讨论了它们的Lyapu nov稳定性，导出了若干稳定性判据，并在参数平面上绘出了稳定域. 关键词： 超细长弹性杆 Kirchhoff方程 常值特解 Lyapunov稳定性     

用模拟万用表测电容

介绍了用模拟万用表和秒表测量电容的简单方法，对测量结果的误差原因进行了分析，给出了提高测量精度的几点措施。