Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

电容传感器在使用中存在的几个问题及处理方法

随着电容测量技术的迅速发展，电容传感器在非电量测量和自动检测中得到广泛应用，但它在使用过程中也存在一些问题，针对在使用电容传感器过程中存在的几个问题，从电容传感器的原理和工作过程两个方面进行了讨论，并提出行之有效的处理方法。     

用模拟万用表测电容

介绍了用模拟万用表和秒表测量电容的简单方法，对测量结果的误差原因进行了分析，给出了提高测量精度的几点措施。     

低压铝箔交流腐蚀研究

在３０Ｈｚ频率下，通过铝箔在ＨＣｌ＋Ｈ２ＳＯ４＋ＨＮＯ３＋Ｈ３ＰＯ４体系中的交流腐蚀，研究腐蚀液组成中腐蚀主体及缓蚀剂对铝箔腐蚀的作用，探讨腐蚀过程中电源频率、腐蚀液温度、电流密度及腐蚀时间对铝箔腐蚀的影响。腐蚀液组成的配比恰当，有利于比容的提高。在特定的频率下采用合适的腐蚀液温度、适宜的电流密度和腐蚀时间可以提高铝箔的静电容量。     

关于非平行板电容器电容计算的讨论

用串联方法计算非平行板电容器的电容，简便地得到与其他方法相同的结果。     

聚乙撑二氧噻吩膜在氧化态的充电过程及电容研究

In this paper, the chronoamperometry was used to study the charging processes of polyethylenedioxythiophene (PEDOT) modified electrodes in the potential range where PEDOT was in the oxidized state. The results show that the charging behaviors of the PEDOT films are well agreed with the exhausted finite diffusion model. The dependence of the capacitance values of the films on potential and concentration of solution was also studied in this potential range.     

Comparison between potentiostatic and galvanostatic intermittent titration techniques for determination of chemical diffusion coefficients in ion-insertion electrodes

Using well-cycled, thin composite graphite electrodes we analyze carefully the limitations of potentiostatic and galvanostatic intermittent titration techniques (PITT and GITT, respectively) for determination of the differential (incremental) intercalation capacitance, C_dif, and the chemical diffusion coefficient, D, of Li ions in these ion-insertion electrodes (IIEs). We demonstrate the superiority of the GITT over PITT to determine these quantities as the former technique allows for a more accurate determination of C_dif and hence D which closely approach to the spinodal domain related to the first-order phase transition during ion-insertion. We show that GITT is also more effective in eliminating the parasitic contributions of background currents to the total measured response. A pronounced difference in the initial, intrinsic kinetics of formation of a new phase in the bulk of the old one has been observed depending on the direction of titration (phases less saturated with Li are formed faster during deintercalation than the Li-rich phases in the course of intercalation).     

Refining adsorption parameters of n-butyl alcohol at the interface of mercury electrode with aqueous NaF and Na2SO4 solutions by correcting the adsorbate concentration

As an adjunct to the regression analysis of differential capacitance curves, which allows refining the adsorption parameters, a program, which takes into account possible errors in volume concentrations of organic substances, is developed. Using this procedure, the earlier data on the differential capacitance of a mercury electrode in aqueous solutions of normal butanol (1-BuOH) containing either 0.1 M NaF or 0.05 and 0.5 M Na₂SO₄ as the supporting electrolyte are analyzed. This allows obtaining the most accurate values of adsorption parameters for the systems mentioned above within the framework of the model of two parallel capacitors and the Frumkin isotherm. It is shown that, when a linear dependence of the intermolecular interaction parameter on the electrode potential is taken into account, the standard deviation of experimental capacitance values from those calculated using the mentioned model is 6.8–8.8%, which points to very high accuracy of this phenomenological model.     

浮动电极对屏蔽栅沟槽型MOSFET特性的影响

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm²、特征栅漏电容为4.72 pF·mm^-2的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。