An LDMOS with large SOA and low specific on-resistance

An LDMOS with nearly rectangular-shape safe operation area (SOA) and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be lowered down to 74.7 mΩ·cm² for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ionization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large V_GS is obtained and snap-back is suppressed as well.     

Chaos and asymptotical stability in discrete-time recurrent neural networks with generalized input-output function

We theoretically investigate the asymptotical stability, local bifurcations and chaos of discrete-time recurrent neural networks with the form of

RC-IGBT的snap-back现象及其仿真

The RC-IGBT(reverse conducting insulated gate bipolar transistor) is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.     

Chaos induced by snap-back repellers in non-autonomous discrete dynamical systems

This paper focuses on chaos induced by snap-back repellers in non-autonomous discrete systems. A new concept of snap-back repeller for non-autonomous discrete systems is introduced and several new criteria of chaos induced by snap-back repellers in non-autonomous discrete systems are established. In addition, it is proved that a regular and nondegenerate snap-back repeller in non-autonomous discrete systems implies chaos in the (strong) sense of Li–Yorke. Two illustrative examples are proved.     

Nonlinear modulation of the interfacial waves of two superposed fluids

The slow modulation of the interfacial capillary — gravity waves of two superposed fluids with uniform depths and solid walls is investigated by using the method of multiple scales. The evolution of a packet is described by the nonlinear Schrödinger equation, and then the stability of the so-called Stokes wave train is discussed.     

SHEAR BEAM MODEL FOR INTERFACE FAILURE UNDER ANTIPLANE SHEAR (Ⅱ)- INSTABILITY

Based on the (Ⅰ) of the present work, the behavior of shear beam model at crack initiation stage and at instable propagation stage was studied. The prime results include: 1) discriminant equation which clarifies the mode of instability, snap-back or snap-through, was established; 2) analytical solution was given out for the double shear beam and the load-displacement diagram for monotonic loading was presented for a full process; and 3) the problem of the energy release induced by instability was discussed.     

抑制或消除RC-IGBT回跳现象的技术发展概述

逆导型绝缘栅双极型晶体管(RC-IGBT)以其良好的软关断特性、短路特性以及良好的功率循环特性等优点,成为现在半导体功率器件技术领域研究的热点.RC-IGBT在拥有众多优点的同时,最典型的问题就是电压回跳现象,如何抑制或消除器件开启初期固有的回跳现象是RC-IGBT器件领域的技术关键.通过对RC-IGBT领域的国内外专...     

Snap-Back Repellers and Chaos in Time-delayed Chua＇s Circuit

The chaotic behavior of one-dimensional, 2-segment and 3-segment piecewise-linear maps is examined by using the concept of snap-back repellers introduced by Marotto and the parameters conditions of existence for snap-back repeller are obtained. Simulation results are presented to show the snap-back repeller,some periodic points and attracting interval cycles with chaotic intervals.