Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure

In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H₂) and dichlorosilane (SiH₂Cl₂). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work.     

氮化硅/石墨激光合金化涂层的组织结构与性能研究

为获得金属表面特别是高副接触金属表面含自润滑特性且具有高硬度耐磨特性的功能材料 ,研究了 45 # 钢表面激光合金化氮化硅 /石墨复合涂层的工艺方法、组织特征、界面形态及其形成机制 ,利用光学显微镜、扫描电镜和X射线能谱对所形成合金化层的元素分布和含量进行了分析 ,并对试样硬度进行了测定。结果表明 ,合金化层中元素Fe ,Co ,Si,C分布均匀 ;C含量达到了 15 6 9%,大部分以石墨的形式存在 ,具有一定的自润滑性能 ;但在形成合金化层的温度条件下 ,氮化硅分解严重 ;合金化层硬度提高的主要原因是Si Fe ,Co Fe固溶体的强化作用及高碳马氏体的生成和高硬度碳化物的存在。     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Confinement in a planar waveguide with porous silicon omnidirectional mirrors as confining walls

We present the design and study of waveguide structures based on porous silicon where the light confinement is not due to the usual total reflection effect but to the use of photonic crystals (PCs) as confining walls. These PC are omnidirectional mirrors (OMs), consisting of the periodic repetition of two porous silicon layers with different refractive indices and thicknesses. They reflect the radiation for all angles of incidence within a frequency range called the omnidirectional band gap (OBG). We have followed the PC formalism to investigate the properties of the OM as a multimode waveguide: the number of modes within the band gap, their field spatial distribution and their confinement as a function of the frequency and the core thickness.     

硅光电负阻器件的构成原理与分类

将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 ,以及依据此构成原理确定的分类方法     

微振动光电检测与数据采集系统的设计

提出了一种新的光学非接触式测量方法测量了物体的微振动振幅。用激光作为光源,以四象限硅光电池[1]作为光电探测器,借助三角测量原理,投射在振动源表面的激光反射光束在光电探测器上产生平面位移,将位移信号放大,通过A/D模块采集电压数值,并通过串口通信机制在PC终端实时显示。实验结果表明,该方法原理正确,灵敏度高,便于实现连续、快速、自动化检测,在工业在线检测方面具有良好的应用前景。     

液晶光阀光电导层光吸收系数的研究

用化学气相沉积法制备了液晶光阀中光电导层———非晶硅薄膜,从实验中得出最佳制备工艺的参数取值。给出了用包络线法测量非晶硅薄膜光吸收系数的原理,测量了样品的光吸收系数随波长的变化规律。得到样品在最佳工艺条件下的光吸收系数高于1×103cm-1。     

Titanium nanocarbides: Synthesis and modeling

The present state of research on the production and modeling of nanostructures based on titanium carbide-a typical representative of an extensive class of carbides of d-and f-metals-is reviewed. Methods for the synthesis of various Ti-C nanostructures (molecular clusters, nanocrystallites, nanospheres, nanofibers, nanowires) are examined, and their morphology, atomic structure, and known physicochemical characteristics are described. Theoretical models of the atomic structure and properties of new types of nanostructures in the titanium-carbon system (endo-and exohedral titanofullerenes, “hybrid” structures based on carbon nanotubes, the so-called peapods, nanocables, and a number of others) and the prospects for their application as components of nanoceramics, hydrogen accumulators, materials for spintronics, etc. are discussed. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 43, No. 1, pp. 1–23, January–February, 2007.     

Carbide precipitates in solution-quenched PH13-8 Mo stainless steel: A small-angle neutron scattering investigation

This paper deals with the small-angle neutron scattering (SANS) investigation on solution-quenched PH13-8 Mo stainless steel. From the nature of the variation of the functionality of the profiles for varying specimen thickness and also from the transmission electron microscopy (TEM), it has been established that the small-angle scattering signal predominantly originates from the block-like metallic carbide precipitates in the specimen. The contribution due to double Bragg reflection is not significant in the present case. The single scattering profile has been extracted from the experimental profiles corresponding to different values of specimen thickness. In order to avoid complexity and non-uniqueness of the multi-parameter minimization for randomly oriented polydisperse block-like precipitate model, the data have been analyzed assuming randomly oriented polydisperse cylindrical particle model with a locked aspect ratio.     

Chemical reactivity of hypervalent silicon compounds: The local hard and soft acids and bases principle viewpoint

The silicon atom may increase its coordination number to values greater than four, to form pentacoordinated compounds. It has been observed experimentally that, in general, pentacoordinated compounds show greater reactivity than tetracoordinated compounds. In this work, density functional theory is used to calculate the global softness and the condensed softness of the silicon atom for SiH _n F_4−n and SiH _n F _5−n ¹⁻ . The values obtained show that the global and condensed softness are greater in the pentacoordinated compounds than in the tetracoordinated compounds, a result that explains the enhanced reactivity. If the results are analysed through a local version of the hard and soft acids and bases principle, it is possible to suggest that in nucleophilic substitution reactions, soft nucleophiles preferably react with SiH _n F _5−n ¹⁻ , and hard nucleophiles with SiH _n F_4−n .