The influence of the sacrificial anode nature on the mechanism of electrochemical arylation and alkylation of white phosphorus

The material of the sacrificial anode has a substantial effect on the nature and yield of the target products of electrochemical phosphorylation of organic halides by white phosphorus in the presence of the nickel complexes with 2,2"-bipyridine. The use of the zinc anode results in the products with tricoordinated phosphorus, viz., triorganylphosphines, the reaction on the aluminum anode affords triorganylphosphine oxides, and the presence of Mg²⁺ ions in the reaction mixture provides the transformation of white phosphorus into cyclic phosphines (PhP)₅.     

Interface Amorphization of Two-Dimensional Black Phosphorus upon Treatment with Diazonium Salts

Two-dimensional (2D) black phosphorus (BP) represents one of the most appealing 2D materials due to its electronic, optical, and chemical properties. Many strategies have been pursued to face its environmental instability, covalent functionalization being one of the most promising. However, the extremely low functionalization degrees and the limitations in proving the nature of the covalent functionalization still represent challenges in many of these sheet architectures reported to date. Here we shine light on the structural evolution of 2D-BP upon the addition of electrophilic diazonium salts. We demonstrated the absence of covalent functionalization in both the neutral and the reductive routes, observing in the latter case an unexpected interface conversion of BP to red phosphorus (RP), as characterized by Raman, ³¹P-MAS NMR, and X-ray photoelectron spectroscopies (XPS). Furthermore, thermogravimetric analysis coupled to gas chromatography and mass spectrometry (TG-GC-MS), as well as electron paramagnetic resonance (EPR) gave insights into the potential underlying radical mechanism, suggesting a Sandmeyer-like reaction.     

叠层光刻胶牺牲层工艺研究

通过溅射电镀种子层前预烘胶与严格控制烘胶温度变化速率、用KOH稀溶液去胶、再用稀腐蚀体系加以轻度超声干涉去除电镀种子层和使用丙酮与F117进行应力释放等方法改进工艺后,解决了在叠层光刻胶牺牲层工艺中极易出现的烘胶龟裂、光刻胶不容易去除干净、去除电镀种子层时产生絮状物和悬空结构释放时易黏附等问题.运用叠层光刻胶牺牲层改进工艺可以制备出长4 mm,悬空高度20 μm,平面误差不超过3 μm的悬空结构.     

基于微机械的多孔硅牺牲层技术

多孔硅作为一种牺牲层材料 ,在表面硅微机械加工技术中有着重要的应用。文中综合讨论了三种不同的多孔硅牺牲层技术 ,并用后两种“在低掺杂衬底上的多孔硅牺牲层技术”,制作了良好的悬空微薄膜结构 ,同时对多孔硅表面的薄膜淀积 ,和制备过程中的掩膜材料等进行了分析 ,为利用多孔硅工艺制作各种 MEMS器件奠定了基础。     

微机械可变电容制作工艺中的牺牲层释放和残余应力分析

运用高选择比的特别配方来释放MEMS可变电容制作工艺中的牺牲层,以保护上级板金属铝层,同时很好地释放牺牲层磷硅玻璃。探讨了上级板的粘附问题,对工艺中影响成品率的关键因素残余应力进行了模拟,当温度T为350℃时,平面应力P为811.6 MPa;当温度T为500℃时,平面应力P为1 185.9 MPa。分析了残余应力对上级板的影响和对悬臂梁的等效弹性系数的影响。     

Facile preparation of 3-substituted 2-quinazolinones via electrogenerated base

A new series of 3,4-disubstituted quinazolin-2-ones, with potential T-type calcium channel antagonist activity, and new 4-methylene-quinazolin-2-ones, promising catalysts as N-heterocyclic olefins, have been prepared in good yield by a simple reaction between 2-aminobenzophenone, or 2-aminoacetophenone, and cyanomethyl anion electrogenerated by acetonitrile reduction at a graphite electrode, followed by the addition of different organic isocyanates and subsequent heterocyclization.     

Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

This article reviews the current status of high-density capacitor for volatile memory devices. The dielectric properties for both the Ta₂O₅ film and the (Ba, Sr)TiO₃ (BST) dielectric materials using either the metal organic chemical vapor deposition (MOCVD) or the atomic layer deposition (ALD) are reviewed briefly. New challenges of dielectric material for the next generation, and serious problems emerged during integration to date using Ta₂O₅ and BST. The material characteristics of many electrode materials for the high dielectric materials are introduced. We present the basic properties and integration issued for MOCVD-ruthenium (Ru). The second part of this review summarized the failure mechanisms from barrier properties of previously reported diffusion barriers and emphasizes new design concepts of diffusion barrier for high-density memory devices. Finally, the future direction for a diffusion barrier to advance high-density memory capacitors is suggested.     

牺牲层腐蚀二维数值模拟与仿真

建立了基于扩散方程的二维腐蚀模型,并给出相应的边界条件.为求解二维扩散方程,分别给出了有限差分显式和隐式求解算法.得到了每一时刻溶液在具体位置的浓度值,再由Topography模型计算腐蚀前端面的腐蚀情况得到腐蚀前端行进轮廓线.编程实现了对多种不同牺牲层几何结构以及组合结构腐蚀过程的仿真,最后实验验证了模拟的真实性.