Zn(BTZ)2白色有机电致发光材料的合成及其器件制备

以PCl₃为脱水剂,将邻氨基硫酚与水杨酸脱水环化合成出2-(2-羟基苯基)苯并噻唑,并进一步将所得产物与乙酸锌反应合成出2-(2-羟基苯基)苯并噻唑螯合锌(Zn(BTZ)₂)材料。以该配合物作为发光层制备出结构为ITO/PVK:TPD/Zn(BTZ)₂/Al近白色电致发光器件,其色坐标位于白场之内(x=0.242,y=0.359),在驱动电压为16V时,亮度达3200cdm²,对应的量子效率为0.32%。进一步在Zn(BTZ)₂中掺入橙红色染料Rubrene,制成ITO/PVK:TPD/Zn(BTZ)₂:Rubrene/Al结构器件,实现了纯白色发光(色坐标值:x=0.324,y=0.343),非常接近于白色等能点,且量子效率达0.47%。最后对上述器件的发光和电学性能进行了深入的研究和探讨。     

在半金属表面上应力诱导的红荧烯晶态薄膜

报道了在Bi（001）衬底上从第一层开始形成的红荧烯晶体薄膜.随着覆盖度的增加,红荧烯薄膜的结构会发生从自组装到混合相的转变.在混合相中存在着红荧烯的晶体畴和分子自组装形成的畴壁.特别是,我们在这种晶体畴中发现了Kurdjunov-Sachs（KS）转动外延和巨大的压缩应力.随着覆盖度的增加,红荧烯薄膜会按照逐层生长的模式进行,直至第四个分子单层.我们认为,转动外延过程中所产生的巨大压缩应力是导致晶态红荧烯薄膜的形成原因.     

Acid-catalyzed transformation of rubrene to indenonaphthacene and its paired interacting orbital (PIO) analysis

Treatment of rubrene (5,6,11,12-tetraphenylnaphthacene) with trifluoroacetic acid in dichloromethane gives 4b,9,10-triphenyl-4b,9-dihydroindeno[1,2,3-fg]naphthacene (1) as the sole isolable product. Paired interacting orbital (PIO) analysis indicates that the reaction is initiated by preferential attack of H⁺ at C(11) position of rubrene.     

Wide Field Magnetic Luminescence Imaging

This study demonstrates how magnetic‐field‐dependent luminescence from organic films can be used to image the magnetic configuration of an underlying sample. The organic semiconductors tetracene and rubrene exhibit singlet exciton fission, which is a process sensitive to magnetic fields. Here, thin films of these materials were characterized using photoluminescence spectrometry, atomic force microscopy, and photoluminescence magnetometry. The luminescence from these substrate‐bound thin films is imaged to reveal the magnetic configuration of underlying Nd‐Fe‐B magnets. The tendency of rubrene to form amorphous films and produce large changes in photoluminescence under an applied magnetic field makes it more appropriate for magnetic field imaging than tetracene. This demonstration can be extended in the future to allow simple microscopic imaging of magnetic structure.     

Experimental survey of the kinetics of acene Diels–Alder reactions

Second‐order rate constants were gathered for solution Diels–Alder reactions of substituted and unsubstituted acenes, with the intention of ascertaining ideal diene–dienophile combinations. Particular focus was placed on the larger ring systems namely tetracene, pentacene, and rubrene. The rate constants between the acenes ranged roughly six orders of magnitude, from the slowest reacting diene, rubrene, to the fastest diene, pentacene. The utilized dienophiles covered a large range of reactivity from 2,3‐dichloromaleic anhydride to tetracyanoethylene. To aid in the interpretation of acene reactivity, constants were compared to the extensive body of Diels–Alder literature with well‐studied dienes such as anthracene and trans‐1‐methoxy‐1,3‐butadiene serving as points of reference. Complex reaction kinetics for the addition of MeTAD and rubrene was found: initial fast consumption generated an intermediate, followed by dramatically slower product formation. The kinetic data creates a foundation for the analysis of prior and future reactions between organic semiconductor acene materials with volatized dienophiles, a surface functionalization technique for enhancing these electronic materials. Copyright © 2015 John Wiley & Sons, Ltd.     

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Enhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, charge traps, and foreign molecules at the interface. Here, a novel structure for high‐performance rubrene OFETs is demonstrated that uses graphene and hexagonal boron nitride (hBN) as the contacting electrodes and gate dielectric layer, respectively. These hetero‐stacked OFETs are fabricated by lithography‐free dry‐transfer method that allows the transfer of graphene and hBN on top of an organic single crystal, forming atomically sharp interfaces and efficient charge carrier‐injection electrodes without damage or contamination. The resulting heterostructured OFETs exhibit both high mobility and low operating gate voltage, opening up new strategy to make high‐performance OFETs and great potential for flexible electronics.     

红荧烯晶体薄膜的制备及应用研究进展

红荧烯具有导电性好、吸收系数高等优良的荧光特性和半导体特性,是目前报道的单晶迁移率最高的材料,在有机光电器件中有很好的发展前景,受到科研人员的广泛关注。目前国内外主要采用真空蒸镀方法和溶液加工方法制备红荧烯晶体薄膜,采用各种制备工艺来提高红荧烯薄膜质量。本文在系统介绍红荧烯晶体薄膜制备工艺研究进展的基础上,归纳总结了掺杂种类/聚合物浓度、后处理工艺/实验温度等对红荧烯晶体性能的影响,简要概述了红荧烯薄膜在有机光电子器件应用研究中所取得的研究成果,最后展望了基于红荧烯晶体薄膜的光电器件的发展趋势。     

红荧烯反蛋白石的制备及其光学性质研究

通过表面浸润法制备了红荧烯的反蛋白石结构,成功观测到其结构色,并检测出相对应反射光谱.此类方法可进一步拓展制备多种具有三维有序大孔结构的有机半导体材料,得到新的光电性质.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.