Establishment of Illuminance Scale at UME with an Accurately Calibrated Radiometer

Traceability in illuminance measurements at the National Metrology Institute of Turkey (TüBITAK-UME) was established in 2003 with a detector-based realization. The new measurement technique was developed for the determination of illuminance responsivity and upgrating of the illuminance scale. The unit of the illuminance responsivity, in A/lx, was measured with an expanded uncertainty of 0.2% (k = 2) by supplying using the developed scanning technique for the calculation of color correction factor. The surface of a radiometer was scanned using a double-monochromator facility upgraded with an x-y scanning system. The illuminance responsivity as a function of bandpass and temperature were also investigated in this study. To use a radiometer in the photometric applications of metrology, a light-sensitive device, a so-called trap detector, was characterized by measuring the absolute responsivity, the non-linearity, and spatial non-uniformity.     

105K工作温度的多元长波光导碲镉汞探测器

文章报道了空间多光谱扫描仪红外波段多元光导碲镉汞探测器的研制与优值。重点研究并解决了多元器件光谱曲线不一致性的问题，简述了器件的优值波段响应率RΔλ1，波段探测率DΔλ和单色响应率Rλ的测试定标方法，以及器件按空间环境使用要求经历老炼和环境条件试验的情况。测试结果表明多元件性能稳定可靠，各项指标均达到了空间多光谱扫描仪的技术要求。     

Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.     

太赫兹半导体探测器研究进展

太赫兹（THz）探测器是THz技术应用的关键器件之一．基于半导体的全固态THz量子阱探测器（THzQWIP）具有探测响应速度快、制作工艺成熟、体积小和易集成等优点．文章简要介绍了THz探测器的分类和特点，重点介绍了THzQWIP的工作原理和研究进展．     

A different approach for determining the responsivity of n~+p detectors using scanning electron microscopy

正This paper explores an alternative to the standard method of studying the responsivities(the input-output gain) and other behaviours of detectors at low electron energy.The research does not aim to compare the results of differently doped n~+p detectors;its purpose is to provide an alternative characterization method(using scanning electron microscopy) to those used in previous studies on the responsivity of n~+p doped detectors as a function of the electron radiation energy and other interface parameters.     

Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (~10 and~190 ms) and responsivity (~1.1×10⁵ A/W) were observed from detectors of the shortest gate length of 2 µm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.     

单向载流子传输光电探测器模拟

用Atlas软件对单向载流子传输光电探测器(uni-traveling-carrier photodetector,UTC-PD)进行了模拟,研究了器件的基本工作原理,着重讨论了器件性能与外延层结构的关系.设计出的UTC-PD可同时具有高的响应度(≥0.18A/W)和宽的3dB带宽(≥100GHz).与传统的pin光电探测器相比简化了前端电路结构,降低了噪声,节约了成本,可以应用于超高速光互联.     

HEMT太赫兹探测器响应度和NEP的检测与分析

在0.8～1.1 THz内,对AlGaN/GaN高电子迁移率晶体管(HEMT)太赫兹探测器的响应度和噪声等效功率进行了具体测试和分析。在太赫兹波辐射下,HEMT太赫兹探测器源漏端产生能被栅压灵敏调控的直流光电流。该型探测器在300 K和77 K下的电流响应度分别为83 mA/W和4.1 A/W,电压响应度分别为4 kV/W和50 kV/W,噪声等效功率分别达到22 pW/Hz0.5和1 pW/Hz0.5。采用两种较为典型的测量方法,通过对实验结果的比较,确定了影响该类型探测器的响应度和噪声等效功率的主要因素,并提出了增强响应度和降低噪声等效功率的具体措施。     

基于光谱响应定标的辐射测温方法

辐射测温是通过测量物体发出的辐射来反演温度,辐射测量方程中含有与空间位置相关的非光谱参数,通常需通过辐射标定予以确认。而该研究将非光谱参数归入有限项级数形式的光谱发射率中,这既不会影响多通道测温方程组的封闭性,又不会影响真温求解,从而在无需测量数据归一化的条件下,实现了无需空间位置标定的辐射测温,该方法仅需要标定仪器的绝对光谱响应或相对光谱响应,但不能解得发射率。以两个特例分别对多波长测温方法和多谱段测温方法的求解特性进行了研究。结果表明：对于任意的测量矢量,有效波长不相同的多波长测温唯一解是存在的;而多谱段测温时,存在无解区域,双解直线,甚至可能存在三解直线。