A new molecular rectifier device and some research in its processing

Organic materials of D-π-A type MR-X (MR-1: p-dimethylaminophenylethenetrica-rbonitrile and MR-2: p-diphenylaminophenylethene tricarbonitrile) were designed and synthesized. The device with a sandwich structure shows good rectificative phenomena. The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag). It has been found that rectificative phenomena exist only in the atmosphere-liquid interface region by means of liquid adsorption, and electric field could help form the oriented molecular film. __________ Translated from Journal of Fudan University (Natural Science), 2005, 44(4) (in Chinese)     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

250W带功率因数校正整流电源模块的研制

功率因数校正技术越来越成为电源行业研究的热点。文中介绍了适用于雷达等设备的250W带功率因数校正整流电源模块的设计，分析了其中升压电感器设计、主开关管保护、控制电路消振、散热设计和表面贴装等关键技术，完成了实验研究，获得了满意的试验结果。     

铁路站段用交流不间断电源供电系统

结合铁路站段的特点 ,介绍了一种交流不间断电源供电系统 ,能够很好的解决其供电问题。     

一种高效的大功率宽带整流电路

提出了一种由π型匹配枝节、整流二极管、直通滤波器组成的高效大功率宽带整流电路。采用2只HSMS-282P肖特基二极管桥设计单级倍压整流电路,使电路在整流效率不下降的情况下提升输入的功率容量;采用π型匹配枝节实现阻抗匹配,使电路具有宽频特性,同时其并联短路枝节可以作为输入滤波器,实现小型化和整流效率的提高。直通滤波器用于抑制基频和二极管非线性产生的高次谐波,以提高整流效率。实测结果表示：在2.05~2.6 GHz带宽内整流效率大于60%;在2.45 GHz工作频率和35 dBm输入功率下,整流电路在330 Ω负载上获得70%的整流效率。该整流电路具有整流效率高、功率容量大、频带宽的特性,可为工程人员设计大功率微波整流电路提供设计指导。     

电子镇流器中功率因数校正电路的分析及应用

IR2166/IR2167是集功率因数校正器(PFC)、镇流器和半桥驱动器为一体的新型电子镇流器驱动电路.内部的功率因数校正(PFC)电路以临界导通模式(CCM)工作,可获得高功率因数、低总谐波失真(THD)及直流电压调整.给出典型PFC控制电路的原理并进行了分析.     

电子设备电源系统的谐波特性研究

电子设备的电源系统或电力系统中,存在多种类型的谐波源,分为谐波电流源和谐波电压源,本文针对典型电源系统开关电源系统进行分类和建模,给出各类谐波源的特征,并对容性滤波整流电路的谐波特性进行了分析.     

Organic field effect transistor composed by fullerene C60 and heterojunctions

We present a study of the complex electronic behavior of a fullerene (C₆₀) molecule attached to six leads (heterojunctions), which works as a three-dimension rectifier. In addition, we confirmed that the fullerene works not only as an electron donor, but also as barrier and transport channel to electrons through the molecule. Moreover, when the phenylpropanodinilla (PPP) lead is orthogonally subjected to bias voltage, the charge distribution and the current displays regions of saturation and resonance similar to semiconductor devices. In order to understand the electronic transport in the molecule, we applied non-equilibrium green function (NEGF) method and performed Fowler-Nordheim (FN) and Millikan-Lauritsen (ML) analyses. The ML curves proved to be sufficient to describe the FN characteristics. In this work, we report the theoretical design for electronic transport of a 3D device (6-terminal).     

小型汽油发电机供电时整流电源工作不稳定情况分析

本文通过对小功率汽油发电机组对高频开关电源供电时出现的不稳定现象进行分析,提出了可行的改造及解决方案.     

单相电压型PWH整流器的无源控制方法

本文根据整流器结构非线性的特点,从能量的角度出发,采取了无源控制方法,这是一种本质上的非线性方法,而且较简单,直观,易于实现。仿真结果表明,采取无源控制方案的整流器对输入电源、负载扰动的瞬态响应特性均较为理想。