排序方式: 共有21条查询结果,搜索用时 740 毫秒
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Mingzhen Xu Changhua Tan Cunyu Yang Bing Xie 《International Journal of Electronics》2013,100(4):383-393
A proportional difference operator method has been presented to study the electrical characteristics of MOSFETs in all the operating regimes. It is shown that the proportional difference drain current versus the drain voltage exhibits a spectrum feature in all regions of operation including the subthreshold regime and the saturation regime. The amplitude of the spectrum peak is related to the effective carrier mobility, and the spectrum peak position responds to the voltage constants in each operating region (including the subthreshold and saturation regime) of a MOSFET. This then enables the more important statistic performance of MOSFETs to be evaluated using the proportional difference operator method. Analytical expressions for computing these parameters (such as effective carrier mobility, thermal voltage, threshold voltage etc.) have been derived and experimental results have been presented. 相似文献
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Gangyao Xiao Huijuan He Yupu Liu Yinghua Zhang Zhijiang Wang 《Chinese Journal of Lasers》1993,2(2):103-108
Amplified low-repetition-rate fs pulse is generated with dye laser amplifier(DLA). The pulsewidth is measured with a computer-aided autocorrelator and the fs pulsewidth broadening caused by the dispersion of the DLA is analyzed. Furthermore, the autocorrelator introduced in this paper could be used as a low scanning autocorrelator to measure high-repetition-rate pulsewidth. 相似文献
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为简化总线式RS485隔离器的设计,提出基于脉冲变压器的总线式RS485隔离器的技术方案。该方案具有简单实用、无需电源、无需考虑数据流向、在有限范围内波特率自适应、底层用户群体易于理解和掌控等特点。给出了基本实验电路和脉冲变压器的主要设计依据。基于脉冲变压器的总线式RS485隔离器,尤其适合工业环境下半双工的A、B两线制RS485通信网的升级改造,其基本思想也适用于全双工的W、X、Y、Z四线制RS485/RS422通信网。 相似文献
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主要论述了电解放电复合加工的设计、波形及电参数的选择。讨论了电参数对加工速度、表面粗糙度、电极相对损耗的影响 。 相似文献
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HUANG Liu ZHAO Yu SUN Pulei 《Chinese Journal of Lasers》1999,8(2):116-120
1IntroductionThedevelopmentofmodernscientifictechnologyputforwardhigherandhigherrequirementsforthestabilityoflaserwaveform.In... 相似文献
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Heavy ion results of a 65-nm CMOS SET pulse width testchip are given. The influences of device threshold voltage, temperature and well separation on pulse width are discussed. Experimental data implied that the low device threshold, high temperature and well speraration would contribute to wider SET. The multi-peak phenomenon in the distribution of SET pulse width was first observed and its dependence on various factors is also discussed. 相似文献
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论述如何利用超脉冲二氧化碳激光器对细导线的绝缘漆层进行环剥加工 ,重点论述了对激光 ,光路的设计以及一些重要的工艺问题。 相似文献