激光测速系统中驱动电路的研究

激光测速技术的主要方法有脉冲法和相位法。由于激光相位法测速系统设计复杂,成本较高,因此只考虑脉冲法激光测速。针对脉冲法激光测速,提出了两种易于实现的脉冲驱动电路的设计方法,方法一基于555振荡电路和CPLD,主要利用了CPLD的逻辑延时;方法二完全基于CPLD的逻辑实现。逻辑分析和仿真结果证明,两种方法都可以驱动激光器工作,产生的驱动脉冲的频率和脉宽均可调节。     

宽带啁啾脉冲激光非线性传输过程中的时空微扰研究

基于非线性薛定谔方程推导出大啁啾脉冲的传输方程,利用微扰理论,分析了啁啾脉冲激光的时空不稳定性. 理论上比较清楚的阐述了宽带脉冲激光在大啁啾情况下,其时空噪声的相互影响与相互作用情况及脉冲啁啾对噪声微扰调制的影响,发现在相同γI₀(非线性系数与峰值强度乘积)的情况下脉冲啁啾对噪声调制的增长没有直接影响. 最后我们在实验上利用非线性介质对啁啾脉冲的空间小尺度自聚焦过程进行了部分验证,同时也在数值上对宽带啁啾脉冲的时间噪声调制的增长进行了模拟分析,发现实验结果和模拟分析结论 关键词： 时空不稳定性 宽带脉冲激光 啁啾     

高海拔地区儿童腺苷脱氨酶与免疫球蛋白水平分析

分别采用固相法和溶胶-凝胶(Sol-Gel)法制备了Ca_3Co_4O_9热电陶瓷靶材,对Ca_3Co_4O_9薄膜的成膜工艺及机制进行了分析与探讨,在此基础上,采用适当的靶材利用脉冲激光沉积(PLD)技术在(0001)晶向(c轴)的Al_2O_3衬底上生长了单相的Ca_3Co_4O_9薄膜.通过X-射线衍射(XRD)仪、金相显微镜及扫描电镜(SEM)等表征手段,研究了靶材与薄膜的制备工艺对热电薄膜的物相、显微结构及形貌的影响.用直流四探针法测定了靶材和薄膜电阻率与温度的关系,结果表明,薄膜具有明显的半导体特性.     

Applying pulsed-laser holography to studying the filament behaviour during the air-jet texturing process

By means of a ruby laser, pulsed-laser holography—because of its high speed, non-destructive, and real-time properties—is introduced to the field of textile engineering for studying the behaviour of filaments emerging from a jet nozzle during the air-jet texturing process. It is proved that this is an efficient method to investigate the mechanism of the air-texturing process.     

Progress in Optical Waveguiding Thin Films

Overview of recent activities in the development of active and passive thin film waveguides, waveguide lasers and laser-deposited waveguiding films is given. Published results and parameters are summarized. The focus is on films fabricated by laser deposition.     

一种激光诱导灼蚀制备纳米硅的新方法

采用高强度激光灼蚀沉积(PLD)的方式,在流动N2做为保护气体的情况下,成功制备出Si纳米结构,并利用扫描电镜(SEM)、光致发光(PL)进行表征。结果表明,该方法制备的纳米Si尺寸在几nm到几10nm之间,同时它具有较强的发光,发光强度比同等测量条件下的多孔Si(PS)样品高10倍以上,而且方法比较简单。     

The effect of solvent on the homo-propagation rate coefficients of styrene and methyl methacrylate

The free radical propagation rate coefficients of both Methyl Methacrylate (MMA) and Styrene (STY) have been measured using Pulsed-Laser Polymerization. The effect of solvents on the propagation rate coefficient, k_p, is reported for several solvents, namely, bromobenzene, chlorobenzene, dimethyl sulphoxide, diethyl malonate, diethyl phthalate, benzonitrile, and benzyl alcohol, at 26.5°C. This preliminary data indicated that benzyl alcohol (BzA) had a large effect on the MMA propagation reaction. As earlier work indicated that N-methyl pyrrolidinone (NMP) would also have a large effect on the k_p of MMA, Arrhenius parameters were evaluated for both MMA and STY at two different concentrations of monomer in BzA and NMP. BzA had a significant effect (at 95% confidence) increasing both the activation energy (E_a) and the preexponential factor (A) for MMA and STY. In NMP, a similar trend is observed for MMA polymerization; however, while a solvent effect on STY was observed, the effect on E_a and A was too small to discern with confidence. A series of additional experiments was performed to evaluate the influence of camphorsulfonic acid (CSA) as an additive in STY polymerization. There was no effect of CSA on k_p, confirming that the strong effect CSA has on “living” radical polymerization of styrene does not originate from complexation leading to an accelerated propagation step but rather by altering the ratio of active-to-dormant chains in the reaction. © 1997 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 35 : 2311–2321, 1997     

Pulsed laser deposition and processing of wide band gap semiconductors and related materials

The present work describes the novel, relatively simple, and efficient technique of pulsed laser deposition for rapid prototyping of thin films and multi-layer heterostructures of wide band gap semiconductors and related materials. In this method, a KrF pulsed excimer laser is used for ablation of polycrystalline, stoichiometric targets of wide band gap materials. Upon laser absorption by the target surface, a strong plasm a plume is produced which then condenses onto the substrate, kept at a suitable distance from the target surface. We have optimized the processing parameters such as laser fluence, substrate temperature, background gas pressure, target to substrate distance, and pulse repetition rate for the growth of high quality crstalline thin films and heterostructures. The films have been characterized by x-ray diffraction, Rutherford backscattering and ion channeling spectrometry, high resolution transmission electron microscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy, cathodoluminescence, and electrical transport measurements. We show that high quality AlN and GaN thin films can be grown by pulsed laser deposition at relatively lower substrate temperatures (750–800°C) than those employed in metal organic chemical vapor deposition (MOCVD), (1000–1100°C), an alternative growth method. The pulsed laser deposited GaN films (∼0.5 μm thick), grown on AlN buffered sapphire (0001), shows an x-ray diffraction rocking curve full width at half maximum (FWHM) of 5–7 arc-min. The ion channeling minimum yield in the surface region for AlN and GaN is ∼3%, indicating a high degree of crystallinity. The optical band gap for AlN and GaN is found to be 6.2 and 3.4 eV, respectively. These epitaxial films are shiny, and the surface root mean square roughness is ∼5–15 nm. The electrical resistivity of the GaN films is in the range of 10⁻²–10² Θ-cm with a mobility in excess of 80 cm²V⁻¹s⁻¹ and a carrier concentration of 10¹⁷–10¹⁹ cm⁻³, depending upon the buffer layers and growth conditions. We have also demonstrated the application of the pulsed laser deposition technique for integration of technologically important materials with the III–V nitrides. The examples include pulsed laser deposition of ZnO/GaN heterostructures for UV-blue lasers and epitaxial growth of TiN on GaN and SiC for low resistance ohmic contact metallization. Employing the pulsed laser, we also demonstrate a dry etching process for GaN and AlN films.     

热处理对Ni0.7Zn0.3O薄膜结构及缺陷荧光特性的影响

采用脉冲激光沉积法在Si(100)衬底上制备了Ni0.7Zn0.3O薄膜,通过热处理改变薄膜的缺陷状态,并利用X射线衍射仪、扫描电子显微镜和荧光光谱仪表征薄膜的晶体结构、表面形貌和缺陷发光特性.结果表明:沉积态薄膜为立方结构的Ni0.7Zn0.3O单相,且沿着(200)面高度取向生长.经过热处理后,薄膜形成ZnO和Ni0.7Zn0.3O两相共存的镶嵌结构.样品具有非常丰富的室温荧光光谱,其发光峰主要来自Ni0.7Zn0.3O的缺陷能级跃迁,多缺陷能级导致了多发光峰的荧光光谱.热处理引起薄膜中缺陷的种类和浓度发生变化,严重影响其发光特性.     

脉冲激光作用下表面液膜相变行为的实验观测

本文采用显微放大摄影及快速瞬态温度检测系统，对高能脉冲激光作用下金属表面液膜的相变行为进行了观测、拍照及瞬态温度测量，初步揭示了一些新的物理现象，并研究了激光功率密度、脉冲宽度、工质种类等对表面液膜相变行为的影响．